The beryllium diffusion in heavily doped p-type GaAs structures grown by molecular beam epitaxy was analyzed. Secondary ion mass spectrometry (SIMS) measurements performed on the samples show that Be diffusion in faster in p/p+/p structures than in p/p+ structures. The modeling results also show that in the p/p+/p structures the concentration of point defects in the regions cladding the base layer affects the Be diffusion during rapid thermal processing.
Be diffusion in molecular beam epitaxy-grown GaAs structures
CARNERA, ALBERTO;
2003
Abstract
The beryllium diffusion in heavily doped p-type GaAs structures grown by molecular beam epitaxy was analyzed. Secondary ion mass spectrometry (SIMS) measurements performed on the samples show that Be diffusion in faster in p/p+/p structures than in p/p+ structures. The modeling results also show that in the p/p+/p structures the concentration of point defects in the regions cladding the base layer affects the Be diffusion during rapid thermal processing.
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