In this work we have investigated the behaviour of ultra thin gate oxide subjected to pulsed voltage stress. The results have been compared with similar those obtained under constant voltage stress condition. Stress Induced Leakage Current (SILC) has been studied as a function of the total dose of injected charge and the pulse frequency. A further comparison has been done between SILC and Radiation Induce Leakage Current when either pulsed or constant bias voltage has been applied during irradiation.
Stress Induced Leakage Current under pulsed voltage stress
CESTER, ANDREA;A. PACCAGNELLA;
2000
Abstract
In this work we have investigated the behaviour of ultra thin gate oxide subjected to pulsed voltage stress. The results have been compared with similar those obtained under constant voltage stress condition. Stress Induced Leakage Current (SILC) has been studied as a function of the total dose of injected charge and the pulse frequency. A further comparison has been done between SILC and Radiation Induce Leakage Current when either pulsed or constant bias voltage has been applied during irradiation.File in questo prodotto:
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