CESTER, ANDREA
CESTER, ANDREA
Dipartimento di Ingegneria dell'Informazione - DEI
The Dependence of the Ionizing Radiation Induced Leakage Current versus the total dose on Ultra-Thin Gate Oxides
1998 Ceschia, M.; Paccagnella, A.; Scarpa, A.; Ghidini, G.; Cester, Andrea
Radiation induced leakage current and stress induced leakage current on ultra-thin gate oxides
1998 Ceschia, M.; Paccagnella, A.; Cester, Andrea; Scarpa, A.; Ghidini, G.
Low-Field Current on Thin Oxides After Constant Current or Irradiation Stresses
1998 Ceschia, Marco; Paccagnella, Alessandro; Cester, Andrea; A., Scarpa; A., Candelori; G., Ghidini
Time stability of Stress Induced Leakage Current in thin gate oxides
1999 Cester, Andrea; Paccagnella, Alessandro; M., Buso; G., Ghidini
Temperature dependence of Stress Induced Leakage Current in ultra-thin gate oxide
1999 M., Ceschia; Paccagnella, Alessandro; Cester, Andrea; L., Larcher; G., Ghidini
Total dose dependence of radiation-induced leakage current in ultra-thin gate oxides
1999 M., Ceschia; Paccagnella, Alessandro; A., Scarpa; G., Ghidini; Cester, Andrea
Time Decay of Stress Induced Leakage Current in Thin Gate Oxides by Low-Field Electron Injection
1999 Cester, Andrea; Paccagnella, A.; Ghidini, G.
Stress Induced Leakage Current and Radiation Induced Leakage Current in MOS devices with ultra-thin gate oxide
1999 Ceschia, M.; Cester, Andrea; Paccagnella, A.
Stress Induced Leakage Current dependence on frequency after voltage pulsed stress
1999 Cester, Andrea; Paccagnella, A.; Ceschia, M.; Dosso, G.; Ghidini, G.
Low-field current on thin oxides after constant current or radiation stresses
1999 M., Ceschia; Paccagnella, Alessandro; Cester, Andrea; A., Scarpa; A., Candelori; G., Ghidini
TEMPERATURE DEPENDENCE OF CURRENT NOISE FLUCTUATION OF SOFT BREAKDOWN IN ULTRA-THIN OXIDES
2000 Cester, Andrea; Paccagnella, Alessandro; G., Ghidini; I., Bloom
Pulsed Voltage Stress on thin oxides
2000 Cester, Andrea; Paccagnella, Alessandro; G., Ghidini
Time decay of stress induced leakage current in thin gate oxides by low-field electron injection
2000 Cester, Andrea; Paccagnella, Alessandro; G., Ghidini
Switching Behaviour and Noise of Soft Breakdown Current in Ultra-Thin Gate Oxide
2000 Cester, Andrea; Paccagnella, Alessandro; L., Bandiera; G., Ghidini
Temperature dependence of Soft Breakdown Current Noise and fluctuations in thin oxides
2000 Cester, Andrea; Paccagnella, Alessandro; G., Ghidini; I., Bloom
Soft Breakdown in Ultra-Thin gate oxide after constant current Stress
2000 Cester, Andrea; Paccagnella, A.; Bandiera, L.; Zanella, M.; Ghidini, G.
From Radiation Induced Leakage Current to soft-breakdown in irradiated MOS devices with ultra-thin gate oxide
2000 Ceschia, M.; Paccagnella, A.; Cester, Andrea; Ghidini, G.; Wyss, J.
Stress Induced Leakage Current under pulsed voltage stress
2000 Cester, Andrea; Paccagnella, A.; Ghidini, G.
Leakage current in ultra thin oxides: SILC or Soft Breakdown?
2001 Cester, Andrea; L., Bandiera; Paccagnella, Alessandro; G., Ghidini
Time decay of stress induced leakage current in thin gate oxides by low-field electron injection
2001 Cester, Andrea; Paccagnella, A.; Ghidini, G.