We studied the Soft Breakdown (SB) in ultra-thin gate oxides (< 3 nm) subjected to Constant Current Stress. SB current derives from the superposition of two Random Telegraph Signal noises with different time constants. The current noise power density follows the 1/f power law over a wide range of frequency (1 Hz - 100 kHz).
Soft Breakdown in Ultra-Thin gate oxide after constant current Stress
CESTER, ANDREA;A. PACCAGNELLA;
2000
Abstract
We studied the Soft Breakdown (SB) in ultra-thin gate oxides (< 3 nm) subjected to Constant Current Stress. SB current derives from the superposition of two Random Telegraph Signal noises with different time constants. The current noise power density follows the 1/f power law over a wide range of frequency (1 Hz - 100 kHz).File in questo prodotto:
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