We present new experimental evidence that a single ion may lead to the MOSFET drain current collapse, due to the formation of a localized oxide damaged region over a large portion of the channel width, well before the breakdown onset. We call this phenomena Single Event Drain Current Collapse (SEDC2). This effect is evident in devices with small W and fades as W increases over the size of the ion damaged region.
Ionising Radiation Effects on MOSFET Drain Current
CESTER, ANDREA;A. PACCAGNELLA;
2002
Abstract
We present new experimental evidence that a single ion may lead to the MOSFET drain current collapse, due to the formation of a localized oxide damaged region over a large portion of the channel width, well before the breakdown onset. We call this phenomena Single Event Drain Current Collapse (SEDC2). This effect is evident in devices with small W and fades as W increases over the size of the ion damaged region.
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