Dimethyl, diethyl, and di-iso-butyl aluminum acetylacetonate compounds were synthesized to deposit Al2O3 thin films by low-pressure metal–organic (LP-MO)CVD. Alumina films were grown in the temperature range 400–520 °C under an oxygen or water vapor atmosphere. A kinetic model was applied to analyze the experimental data and to compare the properties of the three precursors. The model, supported by in-line Fourier transform infrared (FTIR) measurements, clearly distinguished the rate-determining steps of the heterogeneous process, with kinetic constants correlated to the molecular structure of the precursors. A method of optimizing deposition conditions, on the basis of the uniformity of the obtained thin films, is discussed.
MOCVD of Al2O3 films using new dialkylaluminum acetylacetonate precursors: growth kinetics and process yields
CAVINATO, GIANNI;
2001
Abstract
Dimethyl, diethyl, and di-iso-butyl aluminum acetylacetonate compounds were synthesized to deposit Al2O3 thin films by low-pressure metal–organic (LP-MO)CVD. Alumina films were grown in the temperature range 400–520 °C under an oxygen or water vapor atmosphere. A kinetic model was applied to analyze the experimental data and to compare the properties of the three precursors. The model, supported by in-line Fourier transform infrared (FTIR) measurements, clearly distinguished the rate-determining steps of the heterogeneous process, with kinetic constants correlated to the molecular structure of the precursors. A method of optimizing deposition conditions, on the basis of the uniformity of the obtained thin films, is discussed.Pubblicazioni consigliate
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