Deposition of thin films of Co- and Mn- oxides as well as of their mixtures with ZrO2 have been carried out by MOCVD using Co(C5H5)2, Mn(C5F6HO2)2(THF)2 and (C5H5)Zr(CH3)2 as precursors. XRD and XPS analyses of the obtained deposits are reported. Introduction of water vapor into the reactor chamber during the flow of the precursors improved their decomposition efficiency and the quality of the films.

Metal organic chemical vapor deposition of Co-, Mn-, Co-Zr and Mn-Zr oxide thin films

CAVINATO, GIANNI;
2000

Abstract

Deposition of thin films of Co- and Mn- oxides as well as of their mixtures with ZrO2 have been carried out by MOCVD using Co(C5H5)2, Mn(C5F6HO2)2(THF)2 and (C5H5)Zr(CH3)2 as precursors. XRD and XPS analyses of the obtained deposits are reported. Introduction of water vapor into the reactor chamber during the flow of the precursors improved their decomposition efficiency and the quality of the films.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/1341841
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