We propose an explanation of several experimental features related to the "pseudogap" in high Tc cuprates in terms of a spin-charge gauge theory. In this approach, based on a formal spin-charge separation applied to the t-J model, the low energy effective action describes gapful spinons (with a theoretically derived doping dependence of the gap ms~J(δ|ln δ|)1/2, where δ is the doping concentration) and holons with "small" Fermi surface (∊F~tδ) interacting via a gauge field. The main effect of gauge fluctuations is to introduce a dissipation ~T/χ, where χ is the diamagnetic susceptibility. The competition between the two energy scales, ms and T/χ, is the root in our approach of many phenomena peculiar to in-plane transport properties of the "pseudogap phase". Furthermore the gauge interaction induces binding of spinon and holon into an "electron" resonance. This binding introduces another energy scale, the recombination rate, which dominates the out-of-plane resistivity, yielding an insulating behavior. A good agreement is found between the experimental data and theoretically derived doping and temperature dependence of resistivity, both in-plane and out-of-plane, and spin relaxation.

Spin-charge gauge theory of "pseuodogap": theory versus experiments

MARCHETTI, PIERALBERTO;
2003

Abstract

We propose an explanation of several experimental features related to the "pseudogap" in high Tc cuprates in terms of a spin-charge gauge theory. In this approach, based on a formal spin-charge separation applied to the t-J model, the low energy effective action describes gapful spinons (with a theoretically derived doping dependence of the gap ms~J(δ|ln δ|)1/2, where δ is the doping concentration) and holons with "small" Fermi surface (∊F~tδ) interacting via a gauge field. The main effect of gauge fluctuations is to introduce a dissipation ~T/χ, where χ is the diamagnetic susceptibility. The competition between the two energy scales, ms and T/χ, is the root in our approach of many phenomena peculiar to in-plane transport properties of the "pseudogap phase". Furthermore the gauge interaction induces binding of spinon and holon into an "electron" resonance. This binding introduces another energy scale, the recombination rate, which dominates the out-of-plane resistivity, yielding an insulating behavior. A good agreement is found between the experimental data and theoretically derived doping and temperature dependence of resistivity, both in-plane and out-of-plane, and spin relaxation.
2003
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/1354959
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