β-Al2TiO5 thin films were prepared by dip-coating on silicon substrates via sol-gel processing. Acid catalyzed sols of aluminum and titanium alkoxides were used as precursors, described in work published previously. The composition of the films and their behavior toward crystallization were studied by x-ray photoelectron spectroscopy and x-ray diffraction as a function of the firing time and temperature. The films were amorphous up to 600 °C and crystalline β-Al2TiO5 was formed at 700 °C. From 800 up to 1200 °C, titania (anatase and rutile) phases were also detected, without decomposition of the metastable β-Al2TiO5 phase. The formation of β-Al2TiO5 at low temperatures is attributed to a diffusion-limited crystallization process, which takes place in the conditions of high homogeneity at molecular level reached in the sol-gel synthesis.

Study of beta-Al2TiO5 thin films by XPS

L. ARMELAO;MARTUCCI, ALESSANDRO;
2001

Abstract

β-Al2TiO5 thin films were prepared by dip-coating on silicon substrates via sol-gel processing. Acid catalyzed sols of aluminum and titanium alkoxides were used as precursors, described in work published previously. The composition of the films and their behavior toward crystallization were studied by x-ray photoelectron spectroscopy and x-ray diffraction as a function of the firing time and temperature. The films were amorphous up to 600 °C and crystalline β-Al2TiO5 was formed at 700 °C. From 800 up to 1200 °C, titania (anatase and rutile) phases were also detected, without decomposition of the metastable β-Al2TiO5 phase. The formation of β-Al2TiO5 at low temperatures is attributed to a diffusion-limited crystallization process, which takes place in the conditions of high homogeneity at molecular level reached in the sol-gel synthesis.
2001
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/1355977
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