A conductive atomic force microscope (C-AFM) has been used to perform a nanometer scale characterization of the electrical properties of irradiated thin SiO2 gate oxides of MOS devices. The results have been compared to those obtained on fresh (without irradiation) and electrically stressed oxides. The electrical images reveal the existence of weak spots, which have been attributed to the electrical damage induced by irradiation. Their I-V characteristics have been registered with the C-AFM. The results show that they have a leaky behaviour, which has been associated to the radiation induced leakage current (RILC).

Leaky spots in irradiated SiO2 gate oxides observed with C-AFM

CESTER, ANDREA;PACCAGNELLA, ALESSANDRO;
2005

Abstract

A conductive atomic force microscope (C-AFM) has been used to perform a nanometer scale characterization of the electrical properties of irradiated thin SiO2 gate oxides of MOS devices. The results have been compared to those obtained on fresh (without irradiation) and electrically stressed oxides. The electrical images reveal the existence of weak spots, which have been attributed to the electrical damage induced by irradiation. Their I-V characteristics have been registered with the C-AFM. The results show that they have a leaky behaviour, which has been associated to the radiation induced leakage current (RILC).
2005
2005 Spanish Conference on Electron Devices
0780388100
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/1421948
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 3
  • ???jsp.display-item.citation.isi??? ND
social impact