An ultrawideband 3.1–10.6-GHz low-noise amplifier employing an input three-section band-pass Chebyshev filter is presented. Fabricated in a 0.18-um CMOS process, the IC prototype achieves a power gain of 9.3 dB with an input match of -10 dB over the band, a minimum noise figure of 4 dB, and an IIP3 of -6.7 dBm while consuming 9 mW.
An ultrawideband CMOS low-noise amplifier for 3.1-10.6-GHz wireless receivers
BEVILACQUA, ANDREA;
2004
Abstract
An ultrawideband 3.1–10.6-GHz low-noise amplifier employing an input three-section band-pass Chebyshev filter is presented. Fabricated in a 0.18-um CMOS process, the IC prototype achieves a power gain of 9.3 dB with an input match of -10 dB over the band, a minimum noise figure of 4 dB, and an IIP3 of -6.7 dBm while consuming 9 mW.
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