From the comparison of precise determinations of the Ge and C contents of a series of Si1-x-yGexCy epilayer samples (x < 0.18, y < 0.02) by Rutherford and resonant backscattering experiments and x-ray diffraction, the variation of the Si1-x-yGewCy lattice spacing as a function of C content is determined. A significant negative deviation from Vegard's rule is observed, in agreement with theoretical predictions by Kelires.

Strong deviation of the lattice parameter in Si1-x-yGexCy epilayers from Vegard's rule

BERTI, MARINA;DE SALVADOR, DAVIDE;DRIGO, ANTONIO;ROMANATO, FILIPPO
1998

Abstract

From the comparison of precise determinations of the Ge and C contents of a series of Si1-x-yGexCy epilayer samples (x < 0.18, y < 0.02) by Rutherford and resonant backscattering experiments and x-ray diffraction, the variation of the Si1-x-yGewCy lattice spacing as a function of C content is determined. A significant negative deviation from Vegard's rule is observed, in agreement with theoretical predictions by Kelires.
1558994394
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11577/152494
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