We report on the fabrication and characterization of a two-dimensional photonic crystal (PC) embedding two InGaAs quantum dot layers as active light emitters. Light confinement was provided by both a PC GaAs slab waveguide and a distributed Bragg reflector (DBR) located at the bottom of the guiding layer. The micro-photoluminescence characterization shows that the photonic crystal can be used to alter the quantum dot emission by modifying the photonic density of states.
Light emission tuning of In0.5Ga0.5As/In0.05Ga0.95As quantum dots by a two-dimensional photonic crystal
ROMANATO, FILIPPO;
2003
Abstract
We report on the fabrication and characterization of a two-dimensional photonic crystal (PC) embedding two InGaAs quantum dot layers as active light emitters. Light confinement was provided by both a PC GaAs slab waveguide and a distributed Bragg reflector (DBR) located at the bottom of the guiding layer. The micro-photoluminescence characterization shows that the photonic crystal can be used to alter the quantum dot emission by modifying the photonic density of states.
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