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EnglishWe report on the direct measurements of surface lattice strain in ZnTe epitaxial layers on {100}GaAs substrates by ion channeling Rutherford backscattering spectrometry and low-temperature (10 K) reflectance spectroscopy measurements. The measured ZnTe strain is the superposition of the expected thermal (tensile) strain and a thickness-dependent residual compressive strain. Our data indicate that the removal of this residual strain is slower than the rate predicted by the equilibrium theory, following an apparent h-1/2 power-law dependence on the epilayer thickness h, above approximately 100 nm.
| Titolo: | Determination of surface lattice strain in ZnTe epilayers on (100)GaAs by ion channeling and reflectance spectroscopy | |
| Autori: | ||
| Data di pubblicazione: | 1993 | |
| Rivista: | ||
| Abstract: | We report on the direct measurements of surface lattice strain in ZnTe epitaxial layers on {100}GaAs substrates by ion channeling Rutherford backscattering spectrometry and low-temperature (10 K) reflectance spectroscopy measurements. The measured ZnTe strain is the superposition of the expected thermal (tensile) strain and a thickness-dependent residual compressive strain. Our data indicate that the removal of this residual strain is slower than the rate predicted by the equilibrium theory, following an apparent h-1/2 power-law dependence on the epilayer thickness h, above approximately 100 nm. | |
| Handle: | http://hdl.handle.net/11577/154139 | |
| Appare nelle tipologie: | 01.01 - Articolo in rivista |
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