We report on the structural characterization by ion channelling Rutherford backscattering spectrometry (RBS) of thin (less than 3 mum) CdS epitaxial layers grown on {111} A-oriented CdTe substrates by chemical vapour deposition. The overall crystalline quality of the present epilayers has been studied as a function of their thickness. Also, the occurrence of single crystal growth vs. highly textured polycrystalline growth has been checked by studying channelling angular dips at different He-4+ beam energies. The CdS epilayers turned out to be essentially single crystalline, although the present RBS measurements show that extended defects are contained in the layers and at the CdS/CdTe interfaces. The dechannelling beam energy dependence allows us to identify these defects as stacking faults, whose concentration profile in the epilayers is reported.

Ion channeling Rutherford backscattering spectrometry structural characterization of CdS/CdTe heterostructures

DRIGO, ANTONIO;ROMANATO, FILIPPO;
1993

Abstract

We report on the structural characterization by ion channelling Rutherford backscattering spectrometry (RBS) of thin (less than 3 mum) CdS epitaxial layers grown on {111} A-oriented CdTe substrates by chemical vapour deposition. The overall crystalline quality of the present epilayers has been studied as a function of their thickness. Also, the occurrence of single crystal growth vs. highly textured polycrystalline growth has been checked by studying channelling angular dips at different He-4+ beam energies. The CdS epilayers turned out to be essentially single crystalline, although the present RBS measurements show that extended defects are contained in the layers and at the CdS/CdTe interfaces. The dechannelling beam energy dependence allows us to identify these defects as stacking faults, whose concentration profile in the epilayers is reported.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/154141
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