Optimization of the structural and optical properties of ZnS epilayers grown on (100)GaAs by MOVPE

Leo, G.; Lovergine, N.; Prete, P.; Longo, M.; Cingolani, R.; Mancini, A. M.; Romanato, Filippo; Drigo, Antonio

doi:10.1016/0022-0248(95)00859-4

The crystalline and optical quality of ZnS epilayers grown on (100)GaAs by MOVPE was investigated by channeling-RBS, 10 K photoluminescence and absorption spectroscopy for different growth conditions. The measurements point out that the crystalline and optical quality of the epilayers strongly depends on the VI/II precursor vapor phase stoichiometry as well as on GaAs surface treatments before the growth. Optimized MOVPE growth conditions have been determined.

Titolo:	Optimization of the structural and optical properties of ZnS epilayers grown on (100)GaAs by MOVPE
Autori:	G. Leo N. Lovergine P. Prete M. Longo R. Cingolani A. M. Mancini ROMANATO, FILIPPO DRIGO, ANTONIO mostra contributor esterni nascondi contributor esterni
Data di pubblicazione:	1996
Rivista:	JOURNAL OF CRYSTAL GROWTH
Abstract:	The crystalline and optical quality of ZnS epilayers grown on (100)GaAs by MOVPE was investigated by channeling-RBS, 10 K photoluminescence and absorption spectroscopy for different growth conditions. The measurements point out that the crystalline and optical quality of the epilayers strongly depends on the VI/II precursor vapor phase stoichiometry as well as on GaAs surface treatments before the growth. Optimized MOVPE growth conditions have been determined.
Handle:	http://hdl.handle.net/11577/154257
Appare nelle tipologie:	01.01 - Articolo in rivista

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