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EnglishThe crystalline and optical quality of ZnS epilayers grown on (100)GaAs by MOVPE was investigated by channeling-RBS, 10 K photoluminescence and absorption spectroscopy for different growth conditions. The measurements point out that the crystalline and optical quality of the epilayers strongly depends on the VI/II precursor vapor phase stoichiometry as well as on GaAs surface treatments before the growth. Optimized MOVPE growth conditions have been determined.
| Titolo: | Optimization of the structural and optical properties of ZnS epilayers grown on (100)GaAs by MOVPE |
| Autori: | |
| Data di pubblicazione: | 1996 |
| Rivista: | |
| Abstract: | The crystalline and optical quality of ZnS epilayers grown on (100)GaAs by MOVPE was investigated by channeling-RBS, 10 K photoluminescence and absorption spectroscopy for different growth conditions. The measurements point out that the crystalline and optical quality of the epilayers strongly depends on the VI/II precursor vapor phase stoichiometry as well as on GaAs surface treatments before the growth. Optimized MOVPE growth conditions have been determined. |
| Handle: | http://hdl.handle.net/11577/154257 |
| Appare nelle tipologie: | 01.01 - Articolo in rivista |
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