The ESD performance of gated FinFET diodes and multi-gate NMOS devices in both active MOS-diode and parasitic-bipolar mode are investigated, highlighting the impact of strained SiN layers. Strain improves the ESD robustness up to 30 % in multi-fin FinFETs. A different failure mechanism is discovered in strained NMOS FinFETs for the parasitic-bipolar mode.
Impact of Strain on ESD Robustness of FinFET Devices
GRIFFONI, ALESSIO;MENEGHESSO, GAUDENZIO;
2008
Abstract
The ESD performance of gated FinFET diodes and multi-gate NMOS devices in both active MOS-diode and parasitic-bipolar mode are investigated, highlighting the impact of strained SiN layers. Strain improves the ESD robustness up to 30 % in multi-fin FinFETs. A different failure mechanism is discovered in strained NMOS FinFETs for the parasitic-bipolar mode.File in questo prodotto:
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