MENEGHESSO, GAUDENZIO

MENEGHESSO, GAUDENZIO  

Dipartimento di Ingegneria dell'Informazione - DEI  

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Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Rapid degradation induced by hot electrons in AlGaAs/GaAs HEMTs 1992 NEVIANI, ANDREAMENEGHESSO, GAUDENZIOPACCAGNELLA, ALESSANDROZANONI, ENRICO + - - GaAs and related compounds 1992
Hot-electron Induced effects, light emission, breakdown and reliability problems phenomena in GaAs MESFET's AlGaAs/GaAs HEMT's and AlGaAs/InGaAS pseudomorphic HEMT's 1994 ZANONI, ENRICONEVIANI, ANDREAMENEGHESSO, GAUDENZIO + - - -
Instabilities induced by DX-center and impact-ionization hole injection in AlGaAs/InGaAs PM-HEMT's 1994 MENEGHESSO, GAUDENZIONEVIANI, ANDREAZANONI, ENRICO + - - -
Reliability issues due to hot-electron effects in GaAs-based MESFETs and HEMTs 1994 ZANONI, ENRICONEVIANI, ANDREAMENEGHESSO, GAUDENZIO + - - Symposium on the Degradation of Electronic Devices Due to Device Operation as Well as Crystalline and Process-Induced Defects
Low Temperature Instabilities in AlGaAs/InGaAs Pseudomorphic HEMT’s Induced by Trapping/Detrapping Effects 1994 MENEGHESSO, GAUDENZIOPACCAGNELLA, ALESSANDROZANONI, ENRICO + - - -
A physics-based, accurate spice model of impact-ionization effects in bipolar transistors 1994 ZANONI, ENRICOMENEGHESSO, GAUDENZIO + - - -
A new degradation mechanism induced by DX-center in AlGaAs/InGaAs PM-HEMT's 1994 ZANONI, ENRICOMENEGHESSO, GAUDENZIONEVIANI, ANDREA + - - -
Recovery of Low Temperature Electron Trapping in AlGaAs/InGaAs PM-HEMTs due to Impact-Ionization 1995 MENEGHESSO, GAUDENZIOPACCAGNELLA, ALESSANDROZANONI, ENRICO + IEEE ELECTRON DEVICE LETTERS - -
Failure Mechanism of AlGaAs/InGaAs Pseudomorphic HEMT’s 1995 ZANONI, ENRICOMENEGHESSO, GAUDENZIO + - - -
On temperature and hot electron induced degradation in AlGaAs/InGaAs PM-HEMT's 1995 MENEGHESSO, GAUDENZIO + - - -
Reliability of power pseudomorphic HEMT’s submitted to termal and hot-electrons tests 1995 MENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -
A Study of Hot-Electron Degradation Effects in pseudomorphic HEMT’s 1995 MENEGHESSO, GAUDENZIO + - - -
Study of Low-Temperature Degradation of AlGaAs/InGaAs Pseudomorphic HEMT’s 1995 MENEGHESSO, GAUDENZIOPACCAGNELLA, ALESSANDROZANONI, ENRICO + - - -
Enhancement and degradation of drain current in pseudomorphic AlGaAs/InGaAs HEMTs induced by hot-electrons 1995 MENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -
Turn-On Speed Of Grounded Gate nMOS ESD protection Transistors 1996 MENEGHESSO, GAUDENZIO + MICROELECTRONICS RELIABILITY - -
Drain current DLTS analysis of recoverable and permanent degradation effects in AlGaAs/GaAs and AlGaAs/InGaAs HEMT's 1996 MENEGHESSO, GAUDENZIOZANONI, ENRICO + MICROELECTRONICS RELIABILITY - -
Effects of channel quantization and temperature on off-state and on-state breakdown in composite channel and conventional InP-based HEMTsInternational Electron Devices Meeting. Technical Digest 1996 MENEGHESSO, GAUDENZIONEVIANI, ANDREAZANONI, ENRICO + - - -
Open channel impact-ionization effects in InP-based HEMT's and their dependence on channel quantization and temperature1996 54th Annual Device Research Conference Digest 1996 MENEGHESSO, GAUDENZIONEVIANI, ANDREAZANONI, ENRICO + - - -
Neutron induced damage in GaAs MESFETs 1996 MENEGHESSO, GAUDENZIOPACCAGNELLA, ALESSANDRO + - - -
Electron bean analysis of the turn-on speed of grounded-gate nMOS EDS protection transistor during Charged-Device-Model (CDM) stress pulses 1996 MENEGHESSO, GAUDENZIO + - - -