MENEGHESSO, GAUDENZIO

MENEGHESSO, GAUDENZIO  

Dipartimento di Ingegneria dell'Informazione - DEI  

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Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
"Electrical Properties, Reliability Issues, and ESD Robustness of InGaN-Based LEDs" in III-Nitride Based Light Emitting Diodes and Applications 2013 MENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO - - Topics in Applied Physics III-Nitride Based Light Emitting Diodes and Applications
"Hot-plugging" of LED modules: Electrical characterization and device degradation 2013 DAL LAGO, MATTEOMENEGHINI, MATTEOTRIVELLIN, NICOLAMENEGHESSO, GAUDENZIOZANONI, ENRICO + MICROELECTRONICS RELIABILITY - -
'Hole Redistribution' Model Explaining the Thermally Activated RONStress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs 2021 Meneghini M.Meneghesso G.Zanoni E. + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
2.1 A/mm current density AlGaN/GaN HEMT 2003 CHINI, ALESSANDROMENEGHESSO, GAUDENZIOZANONI, ENRICOBUTTARI, DARIO + ELECTRONICS LETTERS - -
2014 44th European Solid State Device Research Conference (ESSDERC) 2014 MENEGHESSO, GAUDENZIO + - PROCEEDINGS OF THE EUROPEAN SOLID STATE DEVICE RESEARCH CONFERENCE 2014 44th European Solid State Device Research Conference (ESSDERC)
24 Hours Stress Test and Failure Analysis of 0.25 μm AlGaN/GaN HEMTs 2018 M. RzinF. RampazzoM. MeneghiniG. MeneghessoE. Zanoni + - - Proceedings of the 9th Wide Bandgap Semiconductor and Components workshop
2DEG Retraction and Potential Distribution of GaN-on-Si HEMTs Investigated Through a Floating Gate Terminal 2018 Rossetto, I.Meneghini, M.De Santi, C.PANDEY, SUDIPMeneghesso, G.Zanoni, E. + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
46th Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD 2010) Conference Report 2010 MENEGHESSO, GAUDENZIO + - - WOCSDICE 2010 34rd Workshop on Compound Semiconductor Devices and Integrated Circuits,
A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes 2009 MENEGHINI, MATTEOTRIVELLIN, NICOLAMENEGHESSO, GAUDENZIOZANONI, ENRICO + JOURNAL OF APPLIED PHYSICS - -
A Combined Mechanical and Electrical Characterization Procedure for Investigating the Dynamic Behavior of RF-MEMS Switches 2014 BARBATO, MARCOGILIBERTO, VALENTINACESTER, ANDREAMENEGHESSO, GAUDENZIO IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY - -
A combined µ-Cathodoluminescence and µ-Photoluminescence Investigation of the Degradation of InGaN/GaN Laser Diodes 2013 MENEGHINI, MATTEOCARRARO, SIMONEVACCARI, SIMONETRIVELLIN, NICOLAMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - 10th International Conference on Nitride Semiconductors (online abstract)
A comprehensive reliability evaluation of high-performance AlGaN/GaN HEMTs for space applications 2016 DE SANTI, CARLODALCANALE, STEFANOSTOCCO, ANTONIORAMPAZZO, FABIANAGERARDIN, SIMONEMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - proc. of the 8th Wide Bandgap Semiconductors and Components Workshop
A comprehensive study of MEMS behavior under EOS/ESD events: Breakdown characterization, dielectric charging, and realistic cures 2011 TAZZOLI, AUGUSTOBARBATO, MARCOMENEGHESSO, GAUDENZIO + JOURNAL OF ELECTROSTATICS - -
A Comprehensive Study of MEMS Behavior under EOS/ESD Events: Breakdown, Dielectric Charging, and Realistic Cures 2010 TAZZOLI, AUGUSTOBARBATO, MARCOMENEGHESSO, GAUDENZIO + - - -
A Discussion of the Susceptibility of a Brokaw Bandgap to EMI 2006 BUSO, SIMONEORIETTI, ENRICOMENEGHESSO, GAUDENZIONEVIANI, ANDREASPIAZZI, GIORGIO + - - Proceedings EMC 2006
A Distributed Electrical Network to Model the Local Shunting in Multicrystalline Silicon Solar Cells 2012 MAGNONE, PAOLOBARBATO, MARCOMENEGHINI, MATTEOGILIBERTO, VALENTINAMENEGHESSO, GAUDENZIO + - - 27th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2012
A film-forming graphene/diketopyrrolopyrrole covalent hybrid with far-red optical features: Evidence of photo-stability 2019 Zheng M.Lamberti F.Franco L.Collini E.Fortunati I.Bottaro G.Daniel G.Minotto A.Menna E.Silvestrini S.Durante C.Meneghesso G.Maggini M.Gatti T. + SYNTHETIC METALS - -
A Generalized Approach to Determine the Switching Reliability of GaN HEMTs on-Wafer Level 2021 Modolo N.Minetto A.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + - IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS IEEE International Reliability Physics Symposium Proceedings
A model for the thermal degradation of metal/(p-GaN) interface in GaN-based light emitting diodes 2008 MENEGHINI, MATTEOTREVISANELLO, LORENZO ROBERTOMENEGHESSO, GAUDENZIOZANONI, ENRICO + JOURNAL OF APPLIED PHYSICS - -
A new degradation mechanism induced by DX-center in AlGaAs/InGaAs PM-HEMT's 1994 ZANONI, ENRICOMENEGHESSO, GAUDENZIONEVIANI, ANDREA + - - -