In this paper, we report on an innovative solution based on "composite substrates". The GaAlN/GaN HEMT structures are grown on SiCopSiC composite substrates made of thin single crystal SiC “seed layer” transferred on top of a thick polycrystalline SiC, following the "Smart Cut" technology developed by SOITEC. Thanks to the physical properties of the high quality single crystal SiC combined with the high thermal conductivity of the inexpensive polycrystalline SiC, the SiCopSiC composite substrates are expected to significantly improve the cost of the GaAlN/GaN HEMT structures grown on it, while keeping similar device performances compared to GaAlN/GaN structures grown on bulk SiC substrates.
GaAlN/GaN HEMT heterostructures grown on "SiCopSiC" composite substrates for HEMT application
MENEGHESSO, GAUDENZIO
2008
Abstract
In this paper, we report on an innovative solution based on "composite substrates". The GaAlN/GaN HEMT structures are grown on SiCopSiC composite substrates made of thin single crystal SiC “seed layer” transferred on top of a thick polycrystalline SiC, following the "Smart Cut" technology developed by SOITEC. Thanks to the physical properties of the high quality single crystal SiC combined with the high thermal conductivity of the inexpensive polycrystalline SiC, the SiCopSiC composite substrates are expected to significantly improve the cost of the GaAlN/GaN HEMT structures grown on it, while keeping similar device performances compared to GaAlN/GaN structures grown on bulk SiC substrates.Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
