We present an insight into the parasitic capacitances of one of the most advanced silicon device available today: the FinFET. The performance of bulk FinFET gated diodes is evaluated and compared to SOI, highlighting the role of device geometry and three-dimensional architecture

An Insight into the Parasitic Capacitances of SOI and Bulk FinFET Devices

GRIFFONI, ALESSIO;MENEGHESSO, GAUDENZIO
2009

Abstract

We present an insight into the parasitic capacitances of one of the most advanced silicon device available today: the FinFET. The performance of bulk FinFET gated diodes is evaluated and compared to SOI, highlighting the role of device geometry and three-dimensional architecture
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11577/2373336
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