This paper reports the first ESD results on NMOS and gated diode devices processed in a bulk FinFET technology. A comparison with SOI FinFET performance is carried out, highlighting the role of device geometry and three-dimensional architecture. Moreover, the ESD-RF performance of bulk FinFET gated diodes is evaluated and compared to SOI.

Next Generation FinFET Devices in Bulk Silicon Technology and Their Benefits for ESD Robustness

GRIFFONI, ALESSIO;MENEGHESSO, GAUDENZIO;
2009

Abstract

This paper reports the first ESD results on NMOS and gated diode devices processed in a bulk FinFET technology. A comparison with SOI FinFET performance is carried out, highlighting the role of device geometry and three-dimensional architecture. Moreover, the ESD-RF performance of bulk FinFET gated diodes is evaluated and compared to SOI.
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

Caricamento pubblicazioni consigliate

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11577/2373370
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? ND
social impact