This paper reports the first ESD results on NMOS and gated diode devices processed in a bulk FinFET technology. A comparison with SOI FinFET performance is carried out, highlighting the role of device geometry and three-dimensional architecture. Moreover, the ESD-RF performance of bulk FinFET gated diodes is evaluated and compared to SOI.
Next Generation FinFET Devices in Bulk Silicon Technology and Their Benefits for ESD Robustness
GRIFFONI, ALESSIO;MENEGHESSO, GAUDENZIO;
2009
Abstract
This paper reports the first ESD results on NMOS and gated diode devices processed in a bulk FinFET technology. A comparison with SOI FinFET performance is carried out, highlighting the role of device geometry and three-dimensional architecture. Moreover, the ESD-RF performance of bulk FinFET gated diodes is evaluated and compared to SOI.File in questo prodotto:
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