Heteroleptic guanidinate- and amidinate-based complexes of hafnium as new precursors for MOCVD of HfO2

The synthesis and characterization of four new heteroleptic complexes [Hf{η2-(iPrN)2CNMe2}2Cl2] (1), [Hf{η2-(iPrN)2CNMe2} 2Me2](2),[Hf{η2-(iPrN)2CMe}2Cl2] (3),and[Hf{η2-(iPrN)2- CMe}2Me2] (4) are reported. All the complexes were characterized by spectroscopic methods, while compounds 1–3 were further examined by single-crystal X-ray diffraction, revealing that the complexes are monomers with the hafnium center in a distorted octahedral geometry. The thermal properties of the chlorine-free complexes (2, 4) were examined to determine their suitability for metalorganic chemical vapor deposition (MOCVD) applications, and compound 2 showed good volatility and thermal stability. On the basis of these results, compound 2 was selected for MOCVD of HfO2 with oxygen as oxidant. Depositions were carried out on Si(100) substrates in the temperature range 300–700 °C. The as-deposited HfO2 films crystallized in the monoclinic phase at temperatures above 500 °C, and the composition analysis determined by Rutherford back-scattering (RBS) and X-ray photoelectron spectroscopy (XPS) revealed that the films were stoichiometric and free of carbon. Thus, alkylguanidinatohafnium complex 2 is a promising precursor for growing HfO2 films in a wide temperature range with the desired stoichiometry, because of its adequate volatility, sufficient temperature window between vaporization and decomposition, as well as its ability to decompose cleanly in the presence of oxygen.