A new approach based on Quantum Point Contact (QPC) are presented here to describe Soft Breakdown in stressed MOS capacitors. This paper describes how we can extrapolate the barrier profile from Ig-Vg curves and the obtained results. At the beginning we have studied thickness and height of such barrier as a function of oxide thickness. We have also studied the temperature dependence of Soft Breakdown spot.
A Novel Approach to Quantum Point Contact for Post Soft Breakdown Conduction
CESTER, ANDREA;PACCAGNELLA, ALESSANDRO;
2001
Abstract
A new approach based on Quantum Point Contact (QPC) are presented here to describe Soft Breakdown in stressed MOS capacitors. This paper describes how we can extrapolate the barrier profile from Ig-Vg curves and the obtained results. At the beginning we have studied thickness and height of such barrier as a function of oxide thickness. We have also studied the temperature dependence of Soft Breakdown spot.File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
