An n-type doping significantly increases the number of active, Fe atoms substituting In (FeIn) in Fe-implanted InP. A previous theoretical study has shown that donor-acceptor pairs have direct stabilizing effects on Fe_In related to charge rearrangements strongly localized at the Fe site and involving d orbitals. Here, we extend that study to Fe and Mn acceptors in InP and GaAs. Present results show that the theoretical model proposed for FeIn in InP generally holds for Fe and Mn acceptors in III-V semiconductors.
Stabilizing effects of n-type doping on Fe and Mn acceptors in III-V compounds
GASPAROTTO, ANDREA;CESCA, TIZIANA
2007
Abstract
An n-type doping significantly increases the number of active, Fe atoms substituting In (FeIn) in Fe-implanted InP. A previous theoretical study has shown that donor-acceptor pairs have direct stabilizing effects on Fe_In related to charge rearrangements strongly localized at the Fe site and involving d orbitals. Here, we extend that study to Fe and Mn acceptors in InP and GaAs. Present results show that the theoretical model proposed for FeIn in InP generally holds for Fe and Mn acceptors in III-V semiconductors.File in questo prodotto:
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