GASPAROTTO, ANDREA
GASPAROTTO, ANDREA
Dipartimento di Fisica e Astronomia "Galileo Galilei" - DFA
Thermal-stability of Tasix/n-gaas Metallizations
1989 Paccagnella, Alessandro; C. C., Han; S. S., Lau; Gasparotto, Andrea; Carnera, Alberto; C., Canali
Open-tube Zinc Diffusion Into Indium-phosphide Under A Hydrogen Ambient - Technique Characterization, Acceptor Passivation and Activation Phenomena
1991 S., Pellegrino; A., Caligiore; R. C., Chen; A., Dipaola; R., Nicoli; Carnera, Alberto; Gasparotto, Andrea
Measurements and Applications of High-energy Boron Implants In Silicon
1991 A., Laferla; E., Rimini; Carnera, Alberto; Gasparotto, Andrea; G., Ciavola; G., Ferla
Axial Channeling of Boron Ions Into Silicon
1992 A., Laferla; G., Galvagno; V., Raineri; R., Setola; E., Rimini; Carnera, Alberto; Gasparotto, Andrea
Channeling Effects In High-energy Implantation of N+ In Silicon
1992 Gasparotto, Andrea; Carnera, Alberto; S., Acco; A., Laferla
Ion-implantation and Annealing of Fe For Semiinsulating Layers Formation In Inp
1993 Gasparotto, Andrea; Carnera, Alberto; G., Arzenton; M., Tromby; S., Pellegrino; F., Vidimari; M., Caldironi
Implants of Aluminum In the 50-120 Mev Energy-range Into Silicon
1993 A., Laferla; L., Torrisi; G., Galvagno; E., Rimini; G., Ciavola; Carnera, Alberto; Gasparotto, Andrea
Channeling effects in high energy ion implantation: Si(N)
1993 Berti, Marina; Brusatin, Giovanna; Carnera, Alberto; Gasparotto, Andrea
Dopant Evaporation Sources For Molecular-beam Epitaxy
1993 J. F., Walker; M., Micovic; Carnera, Alberto; Gasparotto, Andrea
High-energy Implants of Aluminum In Czochralski and Floating Zone Grown Silicon Substrates
1993 A., Laferla; L., Torrisi; G., Galvagno; E., Rimini; G., Ciavola; Carnera, Alberto; Gasparotto, Andrea
Al-o Complex-formation In Ion-implanted Czochralski and Floating-zone Si Substrates
1993 A., Laferla; L., Torrisi; G., Galvagno; E., Rimini; G., Ciavola; Carnera, Alberto; Gasparotto, Andrea
Al-o Interactions In Ion-implanted Crystalline Silicon
1994 G., Galvagno; A., Laferla; C., Spinella; F., Priolo; V., Raineri; L., Torrisi; E., Rimini; Carnera, Alberto; Gasparotto, Andrea
Influence of Channeling Effects On Ion Distribution and Damage Profiles During High-energy Ion-implantation In Si
1994 Carnera, Alberto; Gasparotto, Andrea; Berti, Marina; R., Fabbri
Influence of Channeling Effects On Ion Distribution and Damage Profiles During High-energy Ion-implantation In Si
1994 Carnera, Alberto; Gasparotto, Andrea; Berti, Marina; R., Fabbri
Production of Semiinsulating Layers In N-doped Inp By Fe Implantation
1994 Carnera, Alberto; Gasparotto, Andrea; M., Tromby; M., Caldironi; S., Pellegrino; F., Vidimari; C., Bocchi; C., Frigeri
Experimental-analysis of High-energy Boron Implantation In Silicon
1994 A., Laferla; E., Rimini; Carnera, Alberto; Gasparotto, Andrea; G., Ciavola; G., Ferla
Impurity effects on oxygen precipitation induced by MeV implants in Cz silicon
1995 E., Rimini; V., Raineri; A., Laferla; G., Galvagno; G., Franco; Carnera, Alberto; Gasparotto, Andrea
Mev Energy Implantation of Fe In Inp
1995 Carnera, Alberto; Gasparotto, Andrea; A., Scordilli; F., Priolo; C., Frigeri; G., Rossetto
Dopant, Defects and Oxygen Interaction In Mev Implanted Czochralski Silicon
1995 A., Laferla; G., Galvagno; V., Raineri; F., Priolo; Carnera, Alberto; Gasparotto, Andrea; E., Rimini
Pre-amorphization Damage Study In As-implanted Silicon
1995 C., Cellini; Carnera, Alberto; Berti, Marina; Gasparotto, Andrea; D., Steer; M., Servidori; S., Milita