GASPAROTTO, ANDREA

GASPAROTTO, ANDREA  

Dipartimento di Fisica e Astronomia "Galileo Galilei" - DFA  

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Risultati 1 - 20 di 89 (tempo di esecuzione: 0.021 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
A new method for CdSexTe1-x band grading for high efficiency thin-absorber CdTe solar cells 2021 Gasparotto A.Barbato M.Meneghini M.Meneghesso G. + SOLAR ENERGY MATERIALS AND SOLAR CELLS - -
Al-o Complex-formation In Ion-implanted Czochralski and Floating-zone Si Substrates 1993 CARNERA, ALBERTOGASPAROTTO, ANDREA + APPLIED PHYSICS LETTERS - -
Al-o Interactions In Ion-implanted Crystalline Silicon 1994 CARNERA, ALBERTOGASPAROTTO, ANDREA + JOURNAL OF APPLIED PHYSICS - -
Analysis of a novel CuCl2 back contact process for improved stability in CdTe solar cells 2019 Gasparotto A. + PROGRESS IN PHOTOVOLTAICS - -
Analysis of CdSe as an alternative buffer layer for Sb2Se3 solar cells 2023 Gasparotto, AndreaMeneghini, MatteoMeneghesso, Gaudenzio + SOLAR ENERGY - -
Annealing behavior of high temperature implanted Fe impurities in n-InP 2004 CESCA, TIZIANAGASPAROTTO, ANDREA + NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS - -
Assessment of electrical and optical properties of heavily Fe-implanted semi-insulating InP 2001 GASPAROTTO, ANDREA + MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY - -
Atomic environment of Fe following high-temperature implantation in InP 2003 CESCA, TIZIANAGASPAROTTO, ANDREAMATTEI, GIOVANNIRAMPAZZO, VANESSA + PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS - -
Axial Channeling of Boron Ions Into Silicon 1992 CARNERA, ALBERTOGASPAROTTO, ANDREA + NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS - -
Changes in the Mg profile and in dislocations induced by high temperature annealing of blue LEDsGallium Nitride Materials and Devices VIII 2013 MENEGHINI, MATTEOTRIVELLIN, NICOLABERTI, MARINACESCA, TIZIANAGASPAROTTO, ANDREAMENEGHESSO, GAUDENZIOZANONI, ENRICO + PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING - Gallium Nitride Materials and Devices VIII
Channeling effects in high energy ion implantation: Si(N) 1993 BERTI, MARINABRUSATIN, GIOVANNACARNERA, ALBERTOGASPAROTTO, ANDREA NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS - -
Channeling Effects In High-energy Implantation of N+ In Silicon 1992 GASPAROTTO, ANDREACARNERA, ALBERTO + NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS - -
CIGS thin films grown by hybrid sputtering-evaporation method: Properties and PV performance 2018 Gasparotto, Andrea + SOLAR ENERGY - -
Correlation among structural, electrical, and deep-level properties of Fe centers implanted in InP 2003 GASPAROTTO, ANDREACESCA, TIZIANA + PHYSICA. B, CONDENSED MATTER - -
Deep level related yellow luminescence in p-type GaN grown by MBE on (0001) sapphire 2000 GASPAROTTO, ANDREA + MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS - -
Deep level thermal evolution in Fe implanted InP 2007 CESCA, TIZIANAGASPAROTTO, ANDREA + JOURNAL OF APPLIED PHYSICS - -
Deep levels characterization in high temperature iron implanted InP 2005 GASPAROTTO, ANDREACESCA, TIZIANAVERNA, ADRIANO + - - Indium Phosphide and Related Materials Conference Proceedings
Deep levels controlling the electrical properties of Fe-implanted GaInP/GaAs 2007 CESCA, TIZIANAGASPAROTTO, ANDREA + APPLIED PHYSICS LETTERS - -
Deep-level electroluminescence at 3.5 µm from semi-insulating InP layers ion implanted with Fe 2001 GASPAROTTO, ANDREA + SEMICONDUCTOR SCIENCE AND TECHNOLOGY - -
Defect characterization in InP substrates implanted with 2 MeV Fe ions 1997 CARNERA, ALBERTOGASPAROTTO, ANDREA + MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY - -