GASPAROTTO, ANDREA
Dettaglio
GASPAROTTO, ANDREA
Dipartimento di Fisica e Astronomia "Galileo Galilei" - DFA
Pubblicazioni
Risultati 1 - 20 di 81 (tempo di esecuzione: 0.001 secondi).
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GASPAROTTO, ANDREA
Dipartimento di Fisica e Astronomia "Galileo Galilei" - DFA
Risultati 1 - 20 di 81 (tempo di esecuzione: 0.001 secondi).
Titolo | Data di pubblicazione | Autori | Rivista | Serie | Titolo libro | |
---|---|---|---|---|---|---|
1 | Thermal-stability of Tasix/n-gaas Metallizations | 1989 | PACCAGNELLA, ALESSANDRO ; C. C. HAN; S. S. LAU; GASPAROTTO, ANDREA ; CARNERA, ALBERTO ; C. CANALI | THIN SOLID FILMS | ||
2 | Open-tube Zinc Diffusion Into Indium-phosphide Under A Hydrogen Ambient - Technique Characterization, Acceptor Passivation and Activation Phenomena | 1991 | S. PELLEGRINO; A. CALIGIORE; R. C. CHEN; A. DIPAOLA; R. NICOLI; CARNERA, ALBERTO ; GASPAROTTO, ANDREA | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | ||
3 | Measurements and Applications of High-energy Boron Implants In Silicon | 1991 | A. LAFERLA; E. RIMINI; CARNERA, ALBERTO ; GASPAROTTO, ANDREA ; G. CIAVOLA; G. FERLA | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS | ||
4 | Channeling Effects In High-energy Implantation of N+ In Silicon | 1992 | GASPAROTTO, ANDREA ; CARNERA, ALBERTO ; S. ACCO; A. LAFERLA | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS | ||
5 | Axial Channeling of Boron Ions Into Silicon | 1992 | A. LAFERLA; G. GALVAGNO; V. RAINERI; R. SETOLA; E. RIMINI; CARNERA, ALBERTO ; GASPAROTTO, ANDREA | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS | ||
6 | Channeling effects in high energy ion implantation: Si(N) | 1993 | BERTI, MARINA ; BRUSATIN, GIOVANNA ; CARNERA, ALBERTO ; GASPAROTTO, ANDREA | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS | ||
7 | Al-o Complex-formation In Ion-implanted Czochralski and Floating-zone Si Substrates | 1993 | A. LAFERLA; L. TORRISI; G. GALVAGNO; E. RIMINI; G. CIAVOLA; CARNERA, ALBERTO ; GASPAROTTO, ANDREA | APPLIED PHYSICS LETTERS | ||
8 | Ion-implantation and Annealing of Fe For Semiinsulating Layers Formation In Inp | 1993 | GASPAROTTO, ANDREA ; CARNERA, ALBERTO ; G. ARZENTON; M. TROMBY; S. PELLEGRINO; F. VIDIMARI; M. CALDIRONI | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS | ||
9 | High-energy Implants of Aluminum In Czochralski and Floating Zone Grown Silicon Substrates | 1993 | A. LAFERLA; L. TORRISI; G. GALVAGNO; E. RIMINI; G. CIAVOLA; CARNERA, ALBERTO ; GASPAROTTO, ANDREA | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS | ||
10 | Implants of Aluminum In the 50-120 Mev Energy-range Into Silicon | 1993 | A. LAFERLA; L. TORRISI; G. GALVAGNO; E. RIMINI; G. CIAVOLA; CARNERA, ALBERTO ; GASPAROTTO, ANDREA | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS | ||
11 | Dopant Evaporation Sources For Molecular-beam Epitaxy | 1993 | J. F. WALKER; M. MICOVIC; CARNERA, ALBERTO ; GASPAROTTO, ANDREA | JOURNAL OF CRYSTAL GROWTH | ||
12 | Al-o Interactions In Ion-implanted Crystalline Silicon | 1994 | G. GALVAGNO; A. LAFERLA; C. SPINELLA; F. PRIOLO; V. RAINERI; L. TORRISI; E. RIMINI; CARNERA, ALBERTO ; GASPAROTTO, ANDREA | JOURNAL OF APPLIED PHYSICS | ||
13 | Influence of Channeling Effects On Ion Distribution and Damage Profiles During High-energy Ion-implantation In Si | 1994 | CARNERA, ALBERTO ; GASPAROTTO, ANDREA ; BERTI, MARINA ; R. FABBRI | MIKROCHIMICA ACTA | ||
14 | Experimental-analysis of High-energy Boron Implantation In Silicon | 1994 | A. LAFERLA; E. RIMINI; CARNERA, ALBERTO ; GASPAROTTO, ANDREA ; G. CIAVOLA; G. FERLA | RADIATION EFFECTS AND DEFECTS IN SOLIDS | ||
15 | Influence of Channeling Effects On Ion Distribution and Damage Profiles During High-energy Ion-implantation In Si | 1994 | CARNERA, ALBERTO ; GASPAROTTO, ANDREA ; BERTI, MARINA ; R. FABBRI | MIKROCHIMICA ACTA | ||
16 | Production of Semiinsulating Layers In N-doped Inp By Fe Implantation | 1994 | CARNERA, ALBERTO ; GASPAROTTO, ANDREA ; M. TROMBY; M. CALDIRONI; S. PELLEGRINO; F. VIDIMARI; C. BOCCHI; C. FRIGERI | JOURNAL OF APPLIED PHYSICS | ||
17 | Dopant, Defects and Oxygen Interaction In Mev Implanted Czochralski Silicon | 1995 | A. LAFERLA; G. GALVAGNO; V. RAINERI; F. PRIOLO; CARNERA, ALBERTO ; GASPAROTTO, ANDREA ; E. RIMINI | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS | ||
18 | Mev Energy Implantation of Fe In Inp | 1995 | CARNERA, ALBERTO ; GASPAROTTO, ANDREA ; A. SCORDILLI; F. PRIOLO; C. FRIGERI; G. ROSSETTO | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS | ||
19 | Shallow Donors and Deep Levels In Gaas Grown By Atomic Layer Molecular-beam Epitaxy | 1995 | A. BOSACCHI; E. GOMBIA; R. MOSCA; S. FRANCHI; CARNERA, ALBERTO ; GASPAROTTO, ANDREA | JOURNAL OF CRYSTAL GROWTH | ||
20 | Impurity effects on oxygen precipitation induced by MeV implants in Cz silicon | 1995 | E. Rimini; V. Raineri; A. LaFerla; G. Galvagno; G. Franco; CARNERA, ALBERTO ; GASPAROTTO, ANDREA | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS |
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