Different Fe implantation schemes in n-doped InP have been used in order to create semi-insulating layers with the desired characteristics. The electrical properties of these structures have been investigated by means of current-voltage measurements and deep level analyses; compensation of n-doping up to 10^19 cm^-3 has been verified. Electroluminescence emission has also been obtained from the compensated samples with the highest substrate doping concentration up to the temperature of 260 K.
File in questo prodotto:
Non ci sono file associati a questo prodotto.