Different Fe implantation schemes in n-doped InP have been used in order to create semi-insulating layers with the desired characteristics. The electrical properties of these structures have been investigated by means of current-voltage measurements and deep level analyses; compensation of n-doping up to 10^19 cm^-3 has been verified. Electroluminescence emission has also been obtained from the compensated samples with the highest substrate doping concentration up to the temperature of 260 K.
Optical properties and applications of heavily Fe implanted InP
CESCA, TIZIANA;GASPAROTTO, ANDREA;
2002
Abstract
Different Fe implantation schemes in n-doped InP have been used in order to create semi-insulating layers with the desired characteristics. The electrical properties of these structures have been investigated by means of current-voltage measurements and deep level analyses; compensation of n-doping up to 10^19 cm^-3 has been verified. Electroluminescence emission has also been obtained from the compensated samples with the highest substrate doping concentration up to the temperature of 260 K.File in questo prodotto:
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