Vanadium pentoxide thin films are grown on glass and borosilicate substrates by PACVD using a vanadyl (IV) beta-diketonate as precursor. The depositions are can-led out in an RF-plasma reactor with Ar-O2 mixtures and soft process conditions, obtaining high-purity nanocrysralline layers with a strong preferential orientation. The microstructural and morphological characteristics of the films, analyzed respectively by XRD and AFM, show that the sample features can be accurately tailored by an adequate choice of the synthesis conditions. The composition and purity of the films are studied by XPS and SIMS analyses. Impedance Spectroscopy is used to study the conductivity of the layers and the dependence of electrical properties on microstructure.

A PE-MOCVD route to V2O5 nanostructured thin films

BARRECA, DAVIDE;DI NOTO, VITO;RIZZI, GIAN-ANDREA;TONDELLO, EUGENIO
1999

Abstract

Vanadium pentoxide thin films are grown on glass and borosilicate substrates by PACVD using a vanadyl (IV) beta-diketonate as precursor. The depositions are can-led out in an RF-plasma reactor with Ar-O2 mixtures and soft process conditions, obtaining high-purity nanocrysralline layers with a strong preferential orientation. The microstructural and morphological characteristics of the films, analyzed respectively by XRD and AFM, show that the sample features can be accurately tailored by an adequate choice of the synthesis conditions. The composition and purity of the films are studied by XPS and SIMS analyses. Impedance Spectroscopy is used to study the conductivity of the layers and the dependence of electrical properties on microstructure.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11577/2463061
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