A new synthetic route for the deposition of CoAl2O4 thin films at low temperature via MOCVD using the single-source precursor {Co[Al(OiC3H7)4]2} is presented. Molecular properties of {Co[Al(OiC3H7)4]2} have been investigated by means of NMR spectroscopy, mass spectrometry, and thermal analysis. Deposits have been characterized by XRD, AFM, UV-vis, and SIMS measurements.
MOCVD of CoAl2O4 Thin Films from {Co[Al(OiC3H7)4]2} as Precursor
SADA, CINZIA;CASARIN, MAURIZIO;
2007
Abstract
A new synthetic route for the deposition of CoAl2O4 thin films at low temperature via MOCVD using the single-source precursor {Co[Al(OiC3H7)4]2} is presented. Molecular properties of {Co[Al(OiC3H7)4]2} have been investigated by means of NMR spectroscopy, mass spectrometry, and thermal analysis. Deposits have been characterized by XRD, AFM, UV-vis, and SIMS measurements.File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
