Optical constants of SiC thin films deposited with RF magnetron sputtering have been derived in the VUV. The films have been deposited with different parameters resulting in various C/Si ratios. Reflectance measurements have been made with a dedicated facility in the range 300–1300 ´°A . Index of refraction and absorption coefficient have been derived by fitting the reflectance data with the calculated ones.
VUV Reflectance measurements and optical constants of SiC thin films
NICOLOSI, PIERGIORGIO;M.G. PELIZZO;GAROLI, DENIS;PATELLI, ALESSANDRO;
2005
Abstract
Optical constants of SiC thin films deposited with RF magnetron sputtering have been derived in the VUV. The films have been deposited with different parameters resulting in various C/Si ratios. Reflectance measurements have been made with a dedicated facility in the range 300–1300 ´°A . Index of refraction and absorption coefficient have been derived by fitting the reflectance data with the calculated ones.File in questo prodotto:
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