We have studied the Soft Breakdown failure mode in ultra-thin gate oxides subjected to Constant Current Stress and Constant Voltage Stress. The Soft Breakdown current derives from the superposition of several Random Telegraph Noises with different amplitudes and time constants. The noise Power Spectral Density follows a 1/f power law over a range of frequency between 1 Hz and 100 kHz. The discrete fluctuations of Soft Breakdown current can be described with a Poisson process, indicating that they are statistically independent events, at least over a time periods around hundreds of seconds.
Soft Breakdown Current Noise in Ultra-Thin Gate Oxides
CESTER, ANDREA;PACCAGNELLA, ALESSANDRO;
2001
Abstract
We have studied the Soft Breakdown failure mode in ultra-thin gate oxides subjected to Constant Current Stress and Constant Voltage Stress. The Soft Breakdown current derives from the superposition of several Random Telegraph Noises with different amplitudes and time constants. The noise Power Spectral Density follows a 1/f power law over a range of frequency between 1 Hz and 100 kHz. The discrete fluctuations of Soft Breakdown current can be described with a Poisson process, indicating that they are statistically independent events, at least over a time periods around hundreds of seconds.
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