Low-field leakage current has been measured in ultra thin oxides (tox=3 nm) after Constant Current Stress. Such Stress Induced Leakage Current (SILC) features a growth kinetics which, in principle, can be described by the same exponential law as previously found for thicker oxide (> 4 nm). However by a deeper investigation, the characteristics of this leakage current appears more similar to those generally attributed to the Soft Breakdown rather than to SILC.
Leakage current in ultra thin oxides: SILC or Soft Breakdown?
CESTER, ANDREA;PACCAGNELLA, ALESSANDRO;
2001
Abstract
Low-field leakage current has been measured in ultra thin oxides (tox=3 nm) after Constant Current Stress. Such Stress Induced Leakage Current (SILC) features a growth kinetics which, in principle, can be described by the same exponential law as previously found for thicker oxide (> 4 nm). However by a deeper investigation, the characteristics of this leakage current appears more similar to those generally attributed to the Soft Breakdown rather than to SILC.
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