Incidence of Oxide and Interface Degradation on MOSFET Performance

in this work we have addressed as oxide and interface degradation affects MOSFET performance in terms of transconductance (gm), saturation current (Ids,SAT) and threshold voltage (Vth) before SB and HB. We focused our attention on three points: 1) how interface and oxide trap generation modify the DC MOSFET characteristics; 2) the drain current noise; 3) the correlation between the degradation of DC and noise characteristics and the traps commonly related to SILC conduction.