We have studied the Soft Breakdown (SB) in ultra-thin gate oxides (< 3 nm) subjected to electrical stress. Both SB DC characteristics and current fluctuations are strongly dependent on temperature. The current noise power density follows the 1/f power law. The discrete fluctuations typical of SB have been investigated and modelled as a Poisson Process.
Temperature dependence of Soft Breakdown Current Noise and fluctuations in thin oxides
CESTER, ANDREA;PACCAGNELLA, ALESSANDRO;
2000
Abstract
We have studied the Soft Breakdown (SB) in ultra-thin gate oxides (< 3 nm) subjected to electrical stress. Both SB DC characteristics and current fluctuations are strongly dependent on temperature. The current noise power density follows the 1/f power law. The discrete fluctuations typical of SB have been investigated and modelled as a Poisson Process.
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