This work presents the latest progress on the CONFIRM “reCONFIrable circuits by Rf Mems” project. Previous papers [1,2] have been published in recent years showing different phase shifter design typologies for the K/Ku band. This paper presents the design, fabrication and measurements of three K-band 5-bit MEMS phase shifters for phased array antennas, based on the same architecture but for different frequency bands, namely 20.7GHz, 30.5GHz and 35GHz. The devices are intended to be used in phased array antennas for SOTM (Satellite On The Move) Terminals and ESA (Electronically Scanned Antenna) seekers, in both transmitting and receiving channels [3]. They have been designed in microstrip technology using RFMEMS cantilever switches and manufactured on 200 μm thick high resistivity silicon substrate by using the wellestablished FBK MEMS process [5]. The measured results show very high performance for all devices, with RL better than 14dB and IL better than 2dB (average value) and excellent agreement with full-wave predicted results.

RF-MEMS based microwave 5-bit Phase Shifters for Phased Array Antenna Systems

MENEGHESSO, GAUDENZIO;
2011

Abstract

This work presents the latest progress on the CONFIRM “reCONFIrable circuits by Rf Mems” project. Previous papers [1,2] have been published in recent years showing different phase shifter design typologies for the K/Ku band. This paper presents the design, fabrication and measurements of three K-band 5-bit MEMS phase shifters for phased array antennas, based on the same architecture but for different frequency bands, namely 20.7GHz, 30.5GHz and 35GHz. The devices are intended to be used in phased array antennas for SOTM (Satellite On The Move) Terminals and ESA (Electronically Scanned Antenna) seekers, in both transmitting and receiving channels [3]. They have been designed in microstrip technology using RFMEMS cantilever switches and manufactured on 200 μm thick high resistivity silicon substrate by using the wellestablished FBK MEMS process [5]. The measured results show very high performance for all devices, with RL better than 14dB and IL better than 2dB (average value) and excellent agreement with full-wave predicted results.
2011
MEMSWAVE 2011, 12th International Symposium on RF MEMS and RF Microsystems
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2477592
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? ND
social impact