The effect of a transverse magnetic field on the tunnelling probability of electrons in a double-barrier potential is investigated through a direct numerical solution of the one-dimensional effective-mass equation. The value of the transmission coefficient at resonance is found to be unaffected by the field: however, the peak in the I-V characteristic of the double barrier as a diode is markedly decreased when the magnetic field strength is increased, owing to the charge in the electron transverse momentum induced by the field.
Quantum tunnelling of electrons through a double barrier in a transverse magnetic field
ANCILOTTO, FRANCESCO
1988
Abstract
The effect of a transverse magnetic field on the tunnelling probability of electrons in a double-barrier potential is investigated through a direct numerical solution of the one-dimensional effective-mass equation. The value of the transmission coefficient at resonance is found to be unaffected by the field: however, the peak in the I-V characteristic of the double barrier as a diode is markedly decreased when the magnetic field strength is increased, owing to the charge in the electron transverse momentum induced by the field.File in questo prodotto:
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