When Ti-Si diffusion couples are annealed in vacuum to form TiSi 2, most of the oxygen contamination in the as-deposited metal film is lost. An experiment demonstrating that a Si loss also takes place is presented, thus confirming that the oxygen loss occurs by SiO sublimation.
Silicon Loss During Tisi2 Formation
BERTI, MARINA;DRIGO, ANTONIO
1987
Abstract
When Ti-Si diffusion couples are annealed in vacuum to form TiSi 2, most of the oxygen contamination in the as-deposited metal film is lost. An experiment demonstrating that a Si loss also takes place is presented, thus confirming that the oxygen loss occurs by SiO sublimation.
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