Azimuthal X-ray photoelectron diffraction (APD) experiments have been carried out on a sample of Hg0.78Cd0.22 Te (MCT) epitaxially grown by liquid phase epitaxy (LPE) on (111) CdTe. To our knowledge this is the first XPD study of the (111) face of a II-VI semiconductor. Reproducible diffraction features are seen for emission from core levels of Hg, Cd and Te both before and after minimum ion bombardment, with bombardment being done to remove the native oxide overlayer. Single scattering cluster (SSC) calculations have been carried out using a spherical wave (SW) model. From comparison between experiment and theory an absolute determination of the surface polarity is possible. © 1990 IOP Publishing Ltd.

Polarity Determination of the Hgcdte(111) Surface By Azimuthal X-ray Photoelectron Diffraction Experiments

GRANOZZI, GAETANO;RIZZI, GIAN-ANDREA;
1990

Abstract

Azimuthal X-ray photoelectron diffraction (APD) experiments have been carried out on a sample of Hg0.78Cd0.22 Te (MCT) epitaxially grown by liquid phase epitaxy (LPE) on (111) CdTe. To our knowledge this is the first XPD study of the (111) face of a II-VI semiconductor. Reproducible diffraction features are seen for emission from core levels of Hg, Cd and Te both before and after minimum ion bombardment, with bombardment being done to remove the native oxide overlayer. Single scattering cluster (SSC) calculations have been carried out using a spherical wave (SW) model. From comparison between experiment and theory an absolute determination of the surface polarity is possible. © 1990 IOP Publishing Ltd.
1990
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2505230
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