The real and imaginary parts of the dielectric response of surface state electrons (SSE) on helium films adsorbed on oxidized Si platelets have been measured with a microwave cavity at 10 GHz. Preliminary measurements taken at T=1.2 K show an abrupt increase of the SSE mobility at electron densities near 10(11) cm(-2), which is suggestive of quantum melting of the Wigner solid. Reproducibility of this effect on different Si wafers is discussed.
Evidence for quantum melting in the two-dimensional electron system on a thin helium film
MISTURA, GIAMPAOLO;
1996
Abstract
The real and imaginary parts of the dielectric response of surface state electrons (SSE) on helium films adsorbed on oxidized Si platelets have been measured with a microwave cavity at 10 GHz. Preliminary measurements taken at T=1.2 K show an abrupt increase of the SSE mobility at electron densities near 10(11) cm(-2), which is suggestive of quantum melting of the Wigner solid. Reproducibility of this effect on different Si wafers is discussed.File in questo prodotto:
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