We investigated how ultra-thin gate oxides subjected to heavy ion irradiation react to subsequent electrical stresses. In irradiated devices the time-to-breakdown (Soft or Hard) is reduced in comparison with unirradiated samples.
Accelerated Wear-out of Ultra-thin Gate Oxides After Irradiation
CESTER, ANDREA;A. Paccagnella;
2002
Abstract
We investigated how ultra-thin gate oxides subjected to heavy ion irradiation react to subsequent electrical stresses. In irradiated devices the time-to-breakdown (Soft or Hard) is reduced in comparison with unirradiated samples.
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
