In this work we present a model to explain the accelerated wear out of ultra-thin irradiated oxide. By means of our model: 1) we can estimate the number of damaged regions generated by ion hits, and its dependence on the fluence; 2) by studying the wear-out dependence on applied gate voltage in the following electrical stress we can extrapolate the device lifetime and reliability even at operative voltage.
Statistical Model for Radiation Induced Wear-Out of Ultra-Thin Gate Oxides after Exposure to Heavy Ion Irradiation
CESTER, ANDREA;A. Paccagnella;
2003
Abstract
In this work we present a model to explain the accelerated wear out of ultra-thin irradiated oxide. By means of our model: 1) we can estimate the number of damaged regions generated by ion hits, and its dependence on the fluence; 2) by studying the wear-out dependence on applied gate voltage in the following electrical stress we can extrapolate the device lifetime and reliability even at operative voltage.
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