Electrical Stresses on Ultra-Thin Gate Oxide SOI MOSFETs after Irradiation

In this work we have focused our attention on MOSFETs, which are the real basic element of all CMOS application. We have studied the latent effects produced by heavy ion irradiation on PD-SOI MOSFETs with ultra-thin gate oxide, after electrical stresses subsequent to irradiation. Further, we have investigated on how the device size may help to mitigate the radiation damage, as a function of the transistor aspect ratio, presenting new original experimental results and a possible interpretation.