In this work we focused our attention on heavy ion irradiation effects on nanocrystal memory cell arrays. All cells are fabricated by depositing Si nanocrystal on top of a SiO2 layer. Our purpose is to investigate how cell characteristics, retention time, and gate leakage current are modified after irradiation.
Impact of Heavy-Ion Strickes On Nananocrystal Non Volatile Memory Cell Array
CESTER, ANDREA;A. Paccagnella;
2006
Abstract
In this work we focused our attention on heavy ion irradiation effects on nanocrystal memory cell arrays. All cells are fabricated by depositing Si nanocrystal on top of a SiO2 layer. Our purpose is to investigate how cell characteristics, retention time, and gate leakage current are modified after irradiation.
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
