We used different Atomic Force Microscopy related techniques (AFM) to analyze the electrical properties ultra-thin of irradiated gate oxides, gathering information on the size, position, electrical damage and number of conductive spots generated by the impinging particles.
Using AFM Related Techniques for the Nanoscale Electrical Characterization of Irradiated Ultrathin Gate Oxides
CESTER, ANDREA;A. Paccagnella
2007
Abstract
We used different Atomic Force Microscopy related techniques (AFM) to analyze the electrical properties ultra-thin of irradiated gate oxides, gathering information on the size, position, electrical damage and number of conductive spots generated by the impinging particles.File in questo prodotto:
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