We present new results on electrostatic discharge on SOI MOSFETs irradiated with heavy-ion. Irradiation produces a reduction of ESD breakdown voltage and an enhanced probability of generating source-drain low-resistance filaments, even after ESD stress to the gate terminal, which is never observed in unirradiated devices.
Effects of Heavy-Ion Strikes on Fully Depleted SOI MOSFETs With Ultra-Thin Gate Oxide and Different Strain-Inducing Techniques
CESTER, ANDREA;A. Paccagnella;
2007
Abstract
We present new results on electrostatic discharge on SOI MOSFETs irradiated with heavy-ion. Irradiation produces a reduction of ESD breakdown voltage and an enhanced probability of generating source-drain low-resistance filaments, even after ESD stress to the gate terminal, which is never observed in unirradiated devices.
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