Metallurgical and electrical failure mechanisms of the PtSi- Ti/W-Al metal system were investigated in commercial bipolar logic devices and in "to the purpose" prepared samples. SEM, microprobe, AES and X-ray diffraction were used to study interdiffusion phenomena and intermetallic compound formation which were correlated to Schottky diode barrier height changes induced by thermal annealing. A few monolayers of oxygen at the Al-Ti/W interface will strongly reduce the degradation phenomena.

"Reliability of PtSi-Ti/W-Al Metallization System used in Bipolar Logics"19th International Reliability Physics Symposium

ZANONI, ENRICO
1981

Abstract

Metallurgical and electrical failure mechanisms of the PtSi- Ti/W-Al metal system were investigated in commercial bipolar logic devices and in "to the purpose" prepared samples. SEM, microprobe, AES and X-ray diffraction were used to study interdiffusion phenomena and intermetallic compound formation which were correlated to Schottky diode barrier height changes induced by thermal annealing. A few monolayers of oxygen at the Al-Ti/W interface will strongly reduce the degradation phenomena.
19th International Reliability Physics Symposium
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11577/2514355
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