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ZANONI, ENRICO

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Pubblicazioni (Tutti)

Risultati 1 - 20 di 888 (tempo di esecuzione: 0.001 secondi).

	Titolo	Data di pubblicazione	Autori	Rivista	Serie	Titolo libro
1	The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors	2019	Stockman, A.; TAJALLI, ALALEH ; MENEGHINI, MATTEO ; Uren, M. J.; Mouhoubi, S.; GERARDIN, SIMONE ; BAGATIN, MARTA ; PACCAGNELLA, ALESSANDRO ; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO ; Moens, P.; Bakeroot, B.	IEEE TRANSACTIONS ON ELECTRON DEVICES
2	Hot-Electron Trapping and Hole-Induced Detrapping in GaN-Based GITs and HD-GITs	2019	FABRIS, ELENA ; MENEGHINI, MATTEO ; DE SANTI, CARLO ; BORGA, MATTEO ; Kinoshita, Yusuke; Tanaka, Kenichiro; Ishida, Hidetoshi; Ueda, Tetsuzo; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO	IEEE TRANSACTIONS ON ELECTRON DEVICES
3	Demonstration of avalanche capability in polarization-doped vertical GaN pn diodes: Study of walkout due to residual carbon concentration	2019	DE SANTI, CARLO ; FABRIS, ELENA ; Nomoto, K.; Hu, Z.; Li, W.; Gao, X.; Jena, D.; Xing, H. G.; MENEGHESSO, GAUDENZIO ; MENEGHINI, MATTEO ; ZANONI, ENRICO		TECHNICAL DIGEST - INTERNATIONAL ELECTRON DEVICES MEETING	Technical Digest - International Electron Devices Meeting, IEDM
4	Reliability of Ultraviolet Light-Emitting Diodes	2019	DE SANTI, CARLO ; MONTI, DESIREE ; Dalapati, Pradip ; MENEGHINI, MATTEO ; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO			Solid State Lighting Technology and Application Series
5	Gate Reliability of p-GaN Gate AlGaN/GaN High Electron Mobility Transistors	2019	Ge, Mei; RUZZARIN, MARIA ; Chen, Dunjun; Lu, Hai; Yu, Xinxin; Zhou, Jianjun; DE SANTI, CARLO ; Zhang, Rong; Zheng, Youdou; MENEGHINI, MATTEO ; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO	IEEE ELECTRON DEVICE LETTERS
6	Power GaN HEMT degradation: From time-dependent breakdown to hot-electron effects	2019	MENEGHINI, MATTEO ; BARBATO, ALESSANDRO ; BORGA, MATTEO ; DE SANTI, CARLO ; BARBATO, MARCO ; STOFFELS, STEVE ; Zhao, M.; Posthuma, N.; Decoutere, S.; Haeberlen, O.; Detzel, T.; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO		TECHNICAL DIGEST - INTERNATIONAL ELECTRON DEVICES MEETING	Technical Digest - International Electron Devices Meeting, IEDM
7	GaN-based lateral and vertical devices: physical mechanisms limiting stability and reliability	2019	MENEGHESSO, GAUDENZIO ; MENEGHINI, MATTEO ; DE SANTI, CARLO ; ZANONI, ENRICO			Proceedings of the 3rd Electron Devices Technology and Manufacturing Conference (EDTM 2019)
8	Near-UV LED-based systems for low-cost and compact oxygen-sensing systems in gas and liquids	2019	PIETROBON, MARIKA ; MENEGHINI, MATTEO ; ZANONI, ENRICO ; MENEGHESSO, GAUDENZIO ; PASTORE, PAOLO ; BADOCCO, DENIS ; CENEDESE, ANGELO ; BARBISAN, DIEGO ; TRIVELLIN, NICOLA			Proceedings Volume 10940, Light-Emitting Devices, Materials, and Applications
9	Hot-Electron Effects in GaN GITs and HD-GITs: A Comprehensive Analysis	2019	FABRIS, ELENA ; MENEGHINI, MATTEO ; DE SANTI, CARLO ; BORGA, MATTEO ; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO ; Kinoshita Y.; Tanaka K.; Ishida H.; Ueda T.		IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS	IEEE International Reliability Physics Symposium Proceedings
10	Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate	2019	CANATO, ELEONORA ; MASIN, FABRIZIO ; BORGA, MATTEO ; ZANONI, ENRICO ; MENEGHINI, MATTEO ; MENEGHESSO, GAUDENZIO ; Stockman A.; Banerjee A.; Moens P.		IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS	IEEE International Reliability Physics Symposium Proceedings
11	Physical origin of the optical degradation of InAs quantum dot lasers	2019	BUFFOLO, MATTEO ; SAMPARISI, FABIO ; DE SANTI, CARLO ; Jung D.; Norman J.; Bowers J. E.; Herrick R. W.; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO ; MENEGHINI, MATTEO	IEEE JOURNAL OF QUANTUM ELECTRONICS
12	Demonstration of UV-Induced Threshold Voltage Instabilities in Vertical GaN Nanowire Array-Based Transistors	2019	RUZZARIN, MARIA ; MENEGHINI, MATTEO ; DE SANTI, CARLO ; NEVIANI, ANDREA ; F. Yu; K. Strempel; M. F. Fatahilah; B. Witzigmann; H. S. Wasisto; A. Waag; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO	IEEE TRANSACTIONS ON ELECTRON DEVICES
13	Evidence for defect-assisted tunneling and recombination at extremely low current in InGaN/GaN-based LEDs	2019	DE SANTI, CARLO ; BUFFOLO, MATTEO ; RENSO, NICOLA ; NEVIANI, ANDREA ; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO ; MENEGHINI, MATTEO	APPLIED PHYSICS EXPRESS
14	Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability	2019	STOFFELS, STEVE ; Posthuma N.; Decoutere S.; Bakeroot B.; Tallarico A. N.; SANGIORGI, ENRICO ; Fiegna C.; Zheng J.; Ma X.; BORGA, MATTEO ; FABRIS, ELENA ; MENEGHINI, MATTEO ; ZANONI, ENRICO ; MENEGHESSO, GAUDENZIO ; Priesol J.; Satka A.		IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS	IEEE International Reliability Physics Symposium Proceedings
15	Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs)	2019	RUZZARIN, MARIA ; BORGA, MATTEO ; ZANONI, ENRICO ; MENEGHINI, MATTEO ; MENEGHESSO, GAUDENZIO ; Ji D.; Li W.; Chan S. H.; Agarwal A.; Gupta C.; Keller S.; Mishra U. K.; Chowdhury S.		IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS	IEEE International Reliability Physics Symposium Proceedings
16	Degradation physics of GaN-based lateral and vertical devices	2019	MENEGHINI, MATTEO ; DE SANTI, CARLO ; BARBATO, ALESSANDRO ; BORGA, MATTEO ; CANATO, ELEONORA ; CHIOCCHETTA, FRANCESCA ; FABRIS, ELENA ; MASIN, FABRIZIO ; NARDO, ARIANNA ; RAMPAZZO, FABIANA ; RUZZARIN, MARIA ; TAJALLI, ALALEH ; BARBATO, MARCO ; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO		PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING	Proceedings of SPIE - The International Society for Optical Engineering
17	Challenges for highly reliable GaN-based LEDs	2019	ZANONI, ENRICO ; DE SANTI, CARLO ; TRIVELLIN, NICOLA ; RENSO, NICOLA ; BUFFOLO, MATTEO ; MONTI, DESIREE ; CARIA, ALESSANDRO ; PIVA, FRANCESCO ; MENEGHESSO, GAUDENZIO ; MENEGHINI, MATTEO		PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING	Proceedings of SPIE - The International Society for Optical Engineering
18	Evidence for avalanche generation in reverse-biased InGaN LEDs	2019	RENSO, NICOLA ; DE SANTI, CARLO ; Dalapati, Pradip ; MONTI, DESIREE ; Binder M.; Galler B.; Zeisel R.; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO ; MENEGHINI, MATTEO		PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING	Proceedings of SPIE - The International Society for Optical Engineering
19	Degradation mechanisms of InAs quantum dot 1.3μm laser diodes epitaxially grown on silicon	2019	BUFFOLO, MATTEO ; SAMPARISI, FABIO ; DE SANTI, CARLO ; Jung D.; Norman J.; Bowers J. E.; Herrick R. W.; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO ; MENEGHINI, MATTEO		PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING	Proceedings of SPIE - The International Society for Optical Engineering
20	Origin of the low-forward leakage current in InGaN-based LEDs	2019	DE SANTI, CARLO ; BUFFOLO, MATTEO ; RENSO, NICOLA ; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO ; MENEGHINI, MATTEO		PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING	Proceedings of SPIE - The International Society for Optical Engineering

Dettaglio

Nome completo:

ZANONI, ENRICO

Varianti:

E. ZANONI
ZANONI E.
and E. Zanoni
Enrico Zanoni
E. Zanoni and N. Grandjean
S. PODDA
ZANONI Enrico
AND E. ZANON
Zanoni