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ZANONI, ENRICO

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Pubblicazioni (Tutti)

Risultati 1 - 20 di 886 (tempo di esecuzione: 0.001 secondi).

	Titolo	Data di pubblicazione	Autori	Rivista	Titolo libro
1	White-light sources based on GaN laser diodes: Analysis and application study	2018	TRIVELLIN, NICOLA ; YUSHCHENKO, MAKSYM ; BUFFOLO, MATTEO ; MENEGHINI, MATTEO ; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO	PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING	Proceedings of SPIE - The International Society for Optical Engineering
2	Vlsi Reliability - Contributions From A 3 Year National Research-program	1990	G. SONCINI; C. CANALI; ZANONI, ENRICO ; F. CORSI; A. DILIGENTI; F. FANTINI; V. A. MONACO; G. MASETTI; C. MORANDI	EUROPEAN TRANSACTIONS ON TELECOMMUNICATIONS AND RELATED TECHNOLOGIES
3	Variations in junction capacitance and doping activation associated with electrical stress of InGaN/GaN laser diodes	2013	DE SANTI, CARLO ; MENEGHINI, MATTEO ; CARRARO, SIMONE ; VACCARI, SIMONE ; TRIVELLIN, NICOLA ; S. Marconi; M. Marioli; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO	MICROELECTRONICS RELIABILITY
4	Unpassivated GaN/AlGaN/GaN HEMTs with very low DC to RF drain current dispersion	2004	PIEROBON, ROBERTO ; RAMPAZZO, FABIANA ; CORRADINI, LUCA ; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO ; J. BERNT; M. MARSO AND P. KORDOS
5	Understanding the degradation processes of GaN based LEDs submitted to extremely high current density	2017	RENSO, NICOLA ; MENEGHINI, MATTEO ; BUFFOLO, MATTEO ; DE SANTI, CARLO ; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO	MICROELECTRONICS RELIABILITY
6	Two-Step-Recess Gate InP-Based InAlAs/InGaAs HEMT's	2002	T. SUEMITSU; H. YOKOYAMA; T. ISHII; T. ENOKI; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO	IEEE TRANSACTIONS ON ELECTRON DEVICES
7	Two-Dimensional Numerical Simulation of Deep Level Effect in 6H-SiC Buried-Gate JFETs	2001	G. VERZELLESI; MENEGHESSO, GAUDENZIO ; A. CAVALLINI; ZANONI, ENRICO ; C. CANALI
8	Traps related effects in SiC and GaN-based devices	2001	MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO
9	Traps localization and analysis in GaN HEMTs	2014	A. Chini; F. Soci; MENEGHESSO, GAUDENZIO ; MENEGHINI, MATTEO ; ZANONI, ENRICO	MICROELECTRONICS RELIABILITY
10	Traps characterization in Si-doped GaN/AlGaN/GaN HEMT on SiC by means of low frequency techniques	2005	SOZZA, ALBERTO ; C. DUA; N. SARAZIN; E. MORVAN; S. L. DELAGE; RAMPAZZO, FABIANA ; TAZZOLI, AUGUSTO ; DANESIN, FRANCESCA ; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO ; A. CURUTCHET; N. MALBERT; N. LABAT
11	Traps characterization in AlGaN/GaN HEMTs by means of Drain Current Transient Measurements	2012	F. Soci; A. Chini; F. Fantini; A. Nanni; A. Pantellini; C. Lanzieri; BISI, DAVIDE ; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO		21th European workshop on Heterostructure Technology, HeTech 2012
12	Trapping processes related to iron and carbon doping in AlGaN/GaN power HEMTs	2015	MENEGHINI, MATTEO ; BISI, DAVIDE ; ROSSETTO, ISABELLA ; DE SANTI, CARLO ; STOCCO, ANTONIO ; Hilt, O.; Bahat Treidel, E.; Wuerfl, J.; RAMPAZZO, FABIANA ; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO	PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING	Proceedings of SPIE - The International Society for Optical Engineering
13	Trapping phenomena in AlGaN/GaN HEMTs: A study based on pulsed and transient measurements	2013	MENEGHESSO, GAUDENZIO ; MENEGHINI, MATTEO ; BISI, DAVIDE ; ROSSETTO, ISABELLA ; CESTER, ANDREA ; U. Mishra; ZANONI, ENRICO	SEMICONDUCTOR SCIENCE AND TECHNOLOGY
14	Trapping phenomena and degradation mechanisms in GaN-based power HEMTs	2018	MENEGHINI, MATTEO ; TAJALLI, ALALEH ; Moens, Peter; Banerjee, Abhishek; ZANONI, ENRICO ; MENEGHESSO, GAUDENZIO	MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
15	Trapping mechanisms in GaN-based MIS-HEMTs grown on silicon substrate	2015	BISI, DAVIDE ; MENEGHINI, MATTEO ; Van Hove, M.; Marcon, D; Stoffels, S.; Wu, T. L.; Decoutere, S.; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO	PHYSICA STATUS SOLIDI. A, APPLICATIONS AND MATERIALS SCIENCE
16	Trapping induced parasitic effects in GaN-HEMT for power switching applications	2015	MENEGHESSO, GAUDENZIO ; MENEGHINI, MATTEO ; ZANONI, ENRICO ; Vanmeerbeek, Piet; Moens, Peter		2015 International Conference on IC Design and Technology, ICICDT 2015
17	Trapping in GaN-based metal-insulator-semiconductor transistors: Role of high drain bias and hot electrons	2014	MENEGHINI, MATTEO ; BISI, DAVIDE ; D. Marcon; S. Stoffels; M. Van Hove; T. L. Wu; S. Decoutere; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO	APPLIED PHYSICS LETTERS
18	Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate	2016	MENEGHESSO, GAUDENZIO ; MENEGHINI, MATTEO ; BISI, DAVIDE ; ROSSETTO, ISABELLA ; Wu, T. L.; Van Hove, M.; Marcon, D.; Stoffels, S.; Decoutere, S.; ZANONI, ENRICO	MICROELECTRONICS RELIABILITY
19	Trapping and Reliability assessment in d-mode GaN-based MIS-HEMTs for Power Applications	2014	MENEGHINI, MATTEO ; BISI, DAVIDE ; Denis Marcon; Steve Stoffels; Marleen van Hove; Tian Li Wu; Stefaan Decoutere; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO	IEEE TRANSACTIONS ON POWER ELECTRONICS
20	Trapping and high-field characterization in Recessed-Gate AlGaN/GaN-on-Silicon HEMT	2010	MENEGHESSO, GAUDENZIO ; RONCHI, NICOLO' ; STOCCO, ANTONIO ; ZANONI, ENRICO ; E. PINER; S. TIRELLI; A. R. ALT; C. R. BOLOGNESI		Book of Abstracts of International Workshop on Nitride semiconductors (IWN2010)

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Nome completo:

ZANONI, ENRICO

Varianti:

E. ZANONI
ZANONI E.
and E. Zanoni
Enrico Zanoni
E. Zanoni and N. Grandjean
S. PODDA
ZANONI Enrico
AND E. ZANON
Zanoni