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ZANONI, ENRICO

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Pubblicazioni (Tutti)

Risultati 1 - 20 di 888 (tempo di esecuzione: 0.0 secondi).

	Titolo	Data di pubblicazione	Autori	Rivista	Serie	Titolo libro
1	Evidence for defect-assisted tunneling and recombination at extremely low current in InGaN/GaN-based LEDs	2019	DE SANTI, CARLO ; BUFFOLO, MATTEO ; RENSO, NICOLA ; NEVIANI, ANDREA ; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO ; MENEGHINI, MATTEO	APPLIED PHYSICS EXPRESS
2	GaN-based lateral and vertical devices: physical mechanisms limiting stability and reliability	2019	MENEGHESSO, GAUDENZIO ; MENEGHINI, MATTEO ; DE SANTI, CARLO ; ZANONI, ENRICO			Proceedings of the 3rd Electron Devices Technology and Manufacturing Conference (EDTM 2019)
3	Near-UV LED-based systems for low-cost and compact oxygen-sensing systems in gas and liquids	2019	PIETROBON, MARIKA ; MENEGHINI, MATTEO ; ZANONI, ENRICO ; MENEGHESSO, GAUDENZIO ; PASTORE, PAOLO ; BADOCCO, DENIS ; CENEDESE, ANGELO ; BARBISAN, DIEGO ; TRIVELLIN, NICOLA			Proceedings Volume 10940, Light-Emitting Devices, Materials, and Applications
4	Reliability of Ultraviolet Light-Emitting Diodes	2019	DE SANTI, CARLO ; MONTI, DESIREE ; Dalapati, Pradip ; MENEGHINI, MATTEO ; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO			Solid State Lighting Technology and Application Series
5	Demonstration of UV-Induced Threshold Voltage Instabilities in Vertical GaN Nanowire Array-Based Transistors	2019	RUZZARIN, MARIA ; MENEGHINI, MATTEO ; DE SANTI, CARLO ; NEVIANI, ANDREA ; F. Yu; K. Strempel; M. F. Fatahilah; B. Witzigmann; H. S. Wasisto; A. Waag; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO	IEEE TRANSACTIONS ON ELECTRON DEVICES
6	Power GaN HEMT degradation: From time-dependent breakdown to hot-electron effects	2019	MENEGHINI, MATTEO ; BARBATO, ALESSANDRO ; BORGA, MATTEO ; DE SANTI, CARLO ; BARBATO, MARCO ; STOFFELS, STEVE ; Zhao, M.; Posthuma, N.; Decoutere, S.; Haeberlen, O.; Detzel, T.; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO		TECHNICAL DIGEST - INTERNATIONAL ELECTRON DEVICES MEETING	Technical Digest - International Electron Devices Meeting, IEDM
7	Gate Reliability of p-GaN Gate AlGaN/GaN High Electron Mobility Transistors	2019	Ge, Mei; RUZZARIN, MARIA ; Chen, Dunjun; Lu, Hai; Yu, Xinxin; Zhou, Jianjun; DE SANTI, CARLO ; Zhang, Rong; Zheng, Youdou; MENEGHINI, MATTEO ; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO	IEEE ELECTRON DEVICE LETTERS
8	Demonstration of avalanche capability in polarization-doped vertical GaN pn diodes: Study of walkout due to residual carbon concentration	2019	DE SANTI, CARLO ; FABRIS, ELENA ; Nomoto, K.; Hu, Z.; Li, W.; Gao, X.; Jena, D.; Xing, H. G.; MENEGHESSO, GAUDENZIO ; MENEGHINI, MATTEO ; ZANONI, ENRICO		TECHNICAL DIGEST - INTERNATIONAL ELECTRON DEVICES MEETING	Technical Digest - International Electron Devices Meeting, IEDM
9	Evidence for avalanche generation in reverse-biased InGaN LEDs	2019	RENSO, NICOLA ; DE SANTI, CARLO ; Dalapati, Pradip ; MONTI, DESIREE ; Binder M.; Galler B.; Zeisel R.; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO ; MENEGHINI, MATTEO		PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING	Proceedings of SPIE - The International Society for Optical Engineering
10	Degradation physics of GaN-based lateral and vertical devices	2019	MENEGHINI, MATTEO ; DE SANTI, CARLO ; BARBATO, ALESSANDRO ; BORGA, MATTEO ; CANATO, ELEONORA ; CHIOCCHETTA, FRANCESCA ; FABRIS, ELENA ; MASIN, FABRIZIO ; NARDO, ARIANNA ; RAMPAZZO, FABIANA ; RUZZARIN, MARIA ; TAJALLI, ALALEH ; BARBATO, MARCO ; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO		PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING	Proceedings of SPIE - The International Society for Optical Engineering
11	Degradation mechanisms of InAs quantum dot 1.3μm laser diodes epitaxially grown on silicon	2019	BUFFOLO, MATTEO ; SAMPARISI, FABIO ; DE SANTI, CARLO ; Jung D.; Norman J.; Bowers J. E.; Herrick R. W.; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO ; MENEGHINI, MATTEO		PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING	Proceedings of SPIE - The International Society for Optical Engineering
12	Hot-Electron Effects in GaN GITs and HD-GITs: A Comprehensive Analysis	2019	FABRIS, ELENA ; MENEGHINI, MATTEO ; DE SANTI, CARLO ; BORGA, MATTEO ; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO ; Kinoshita Y.; Tanaka K.; Ishida H.; Ueda T.		IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS	IEEE International Reliability Physics Symposium Proceedings
13	Physical origin of the optical degradation of InAs quantum dot lasers	2019	BUFFOLO, MATTEO ; SAMPARISI, FABIO ; DE SANTI, CARLO ; Jung D.; Norman J.; Bowers J. E.; Herrick R. W.; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO ; MENEGHINI, MATTEO	IEEE JOURNAL OF QUANTUM ELECTRONICS
14	Challenges for highly reliable GaN-based LEDs	2019	ZANONI, ENRICO ; DE SANTI, CARLO ; TRIVELLIN, NICOLA ; RENSO, NICOLA ; BUFFOLO, MATTEO ; MONTI, DESIREE ; CARIA, ALESSANDRO ; PIVA, FRANCESCO ; MENEGHESSO, GAUDENZIO ; MENEGHINI, MATTEO		PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING	Proceedings of SPIE - The International Society for Optical Engineering
15	Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate	2019	CANATO, ELEONORA ; MASIN, FABRIZIO ; BORGA, MATTEO ; ZANONI, ENRICO ; MENEGHINI, MATTEO ; MENEGHESSO, GAUDENZIO ; Stockman A.; Banerjee A.; Moens P.		IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS	IEEE International Reliability Physics Symposium Proceedings
16	High-Current Stress of UV-B (In)AlGaN-Based LEDs: Defect-Generation and Diffusion Processes	2019	MONTI, DESIREE ; DE SANTI, CARLO ; DA RUOS, SARA ; PIVA, FRANCESCO ; Glaab J.; Rass J.; Einfeldt S.; Mehnke F.; Enslin J.; Wernicke T.; Kneissl M.; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO ; MENEGHINI, MATTEO	IEEE TRANSACTIONS ON ELECTRON DEVICES
17	Enhanced semiclassical simulation of InGaN/GaN multi-quantum-well solar cells	2019	Calciati M.; Tibaldi A.; DE SANTI, CARLO ; Palmieri A.; Avataneo L.; MENEGHINI, MATTEO ; Bertazzi F.; Cappelluti F.; Vallone M.; GHIONE, GIOVANNI ; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO ; GOANO, MICHELE		PROCEEDINGS OF THE ... INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES	Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
18	Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability	2019	STOFFELS, STEVE ; Posthuma N.; Decoutere S.; Bakeroot B.; Tallarico A. N.; SANGIORGI, ENRICO ; Fiegna C.; Zheng J.; Ma X.; BORGA, MATTEO ; FABRIS, ELENA ; MENEGHINI, MATTEO ; ZANONI, ENRICO ; MENEGHESSO, GAUDENZIO ; Priesol J.; Satka A.		IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS	IEEE International Reliability Physics Symposium Proceedings
19	Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs)	2019	RUZZARIN, MARIA ; BORGA, MATTEO ; ZANONI, ENRICO ; MENEGHINI, MATTEO ; MENEGHESSO, GAUDENZIO ; Ji D.; Li W.; Chan S. H.; Agarwal A.; Gupta C.; Keller S.; Mishra U. K.; Chowdhury S.		IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS	IEEE International Reliability Physics Symposium Proceedings
20	Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress	2019	MASIN, FABRIZIO ; MENEGHINI, MATTEO ; CANATO, ELEONORA ; DE SANTI, CARLO ; Stockman A.; ZANONI, ENRICO ; Moens P.; MENEGHESSO, GAUDENZIO	APPLIED PHYSICS LETTERS

Dettaglio

Nome completo:

ZANONI, ENRICO

struttura:

Dipartimento di Ingegneria dell'Informazione - DEI

settore SSD:

Settore ING-INF/01 - Elettronica

Varianti:

E. ZANONI
ZANONI E.
and E. Zanoni
Enrico Zanoni
E. Zanoni and N. Grandjean
S. PODDA
ZANONI Enrico
AND E. ZANON
Zanoni