ZANONI, ENRICO

ZANONI, ENRICO  

Dipartimento di Ingegneria dell'Informazione - DEI  

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Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
"Electrical Properties, Reliability Issues, and ESD Robustness of InGaN-Based LEDs" in III-Nitride Based Light Emitting Diodes and Applications 2013 MENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO - - Topics in Applied Physics III-Nitride Based Light Emitting Diodes and Applications
"Hot-plugging" of LED modules: Electrical characterization and device degradation 2013 DAL LAGO, MATTEOMENEGHINI, MATTEOTRIVELLIN, NICOLAMENEGHESSO, GAUDENZIOZANONI, ENRICO + MICROELECTRONICS RELIABILITY - -
"Reliability of PtSi-Ti/W-Al Metallization System used in Bipolar Logics"19th International Reliability Physics Symposium 1981 ZANONI, ENRICO + - - 19th International Reliability Physics Symposium
'Hole Redistribution' Model Explaining the Thermally Activated RONStress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs 2021 Meneghini M.Meneghesso G.Zanoni E. + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
2.1 A/mm current density AlGaN/GaN HEMT 2003 CHINI, ALESSANDROMENEGHESSO, GAUDENZIOZANONI, ENRICOBUTTARI, DARIO + ELECTRONICS LETTERS - -
24 Hours Stress Test and Failure Analysis of 0.25 μm AlGaN/GaN HEMTs 2018 M. RzinF. RampazzoM. MeneghiniG. MeneghessoE. Zanoni + - - Proceedings of the 9th Wide Bandgap Semiconductor and Components workshop
2DEG Retraction and Potential Distribution of GaN-on-Si HEMTs Investigated Through a Floating Gate Terminal 2018 Rossetto, I.Meneghini, M.De Santi, C.PANDEY, SUDIPMeneghesso, G.Zanoni, E. + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
A CMOS 0.8um Programmable Charge Pump for the Output Stage of an Impantable Pacemaker 2000 GEROSA, ANDREANEVIANI, ANDREAZANONI, ENRICO + - - -
A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes 2009 MENEGHINI, MATTEOTRIVELLIN, NICOLAMENEGHESSO, GAUDENZIOZANONI, ENRICO + JOURNAL OF APPLIED PHYSICS - -
A combined Monte Carlo and experimental analysis of light emission phenomena in AlGaAs/GaAs HBTs 1998 NEVIANI, ANDREAZANONI, ENRICO + SEMICONDUCTOR SCIENCE AND TECHNOLOGY - -
A combined µ-Cathodoluminescence and µ-Photoluminescence Investigation of the Degradation of InGaN/GaN Laser Diodes 2013 MENEGHINI, MATTEOCARRARO, SIMONEVACCARI, SIMONETRIVELLIN, NICOLAMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - 10th International Conference on Nitride Semiconductors (online abstract)
A compact method for measuring parasitic resistances in bipolar transistors 1993 ZANONI, ENRICO + - - Proceedings of the European Solid State Device Research Conference
A comprehensive reliability evaluation of high-performance AlGaN/GaN HEMTs for space applications 2016 DE SANTI, CARLODALCANALE, STEFANOSTOCCO, ANTONIORAMPAZZO, FABIANAGERARDIN, SIMONEMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - proc. of the 8th Wide Bandgap Semiconductors and Components Workshop
A fully electronic sensor for the measurement of cDNA hybridization kinetics 2007 CAGNIN, STEFANOZANONI, ENRICOLANFRANCHI, GEROLAMO + BIOSENSORS & BIOELECTRONICS - -
A Generalized Approach to Determine the Switching Reliability of GaN HEMTs on-Wafer Level 2021 Modolo N.Minetto A.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + - IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS IEEE International Reliability Physics Symposium Proceedings
A led lighting device with an adjustable spatial distribution of the emitted light 2011 MENEGHINI, MATTEOZANONI, ENRICOBRUSATIN, GIOVANNA + - - -
A model for the thermal degradation of metal/(p-GaN) interface in GaN-based light emitting diodes 2008 MENEGHINI, MATTEOTREVISANELLO, LORENZO ROBERTOMENEGHESSO, GAUDENZIOZANONI, ENRICO + JOURNAL OF APPLIED PHYSICS - -
A new approach to correlate transport processes and optical efficiency in GaN-based LEDs 2009 MENEGHINI, MATTEOZANONI, ENRICO + JOURNAL OF PHYSICS D. APPLIED PHYSICS - -
A new degradation mechanism induced by DX-center in AlGaAs/InGaAs PM-HEMT's 1994 ZANONI, ENRICOMENEGHESSO, GAUDENZIONEVIANI, ANDREA + - - -
A new experimental technique for extracting base resistance and characterizing current crowding phenomena in bipolar transistorsInternational Technical Digest on Electron Devices Meeting 1992 ZANONI, ENRICO + - - International Technical Digest on Electron Devices Meeting