ZANONI, ENRICO

ZANONI, ENRICO  

Dipartimento di Ingegneria dell'Informazione - DEI  

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Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Deep-Level Effects in Back-Barrier-Scaled GaN HEMTs 2026 De Pieri F.Carlotto A.Fregolent M.Cavaliere A.Saro M.Rampazzo F.De Santi C.Meneghesso G.Meneghini M.Zanoni E. + IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES - -
Experimental Evidence of Sustainable Avalanche Operation in E-Mode GaN HEMTs 2026 Fraccaroli R.Dell'Andrea M.Fregolent M.Boito M.Longato S. L.De Santi C.Rossetto I.Zanoni E.Meneghesso G.Meneghini M. + IEEE ELECTRON DEVICE LETTERS - -
Quantitative modeling of threshold instability in β-Ga2O3 finFETs through electro-optical investigation 2026 Fregolent M.Piva F.De Santi C.Buffolo M.Meneghesso G.Zanoni E.Meneghini M. + APL MATERIALS - -
A Schottky gate p-GaN fin-channel field effect transistor on very low-doped p-GaN films 2025 Fregolent, ManuelDe Santi, CarloMeneghesso, GaudenzioZanoni, EnricoMeneghini, Matteo + JAPANESE JOURNAL OF APPLIED PHYSICS - -
Addressing the oxide-aperture dependency of the degradation of 845 nm VCSELs for silicon photonics 2025 Buffolo, MatteoZenari, MicheleDe Santi, CarloMeneghesso, GaudenzioZanoni, EnricoMeneghini, Matteo + - PROCEEDINGS OF SPIE Proceedings of SPIE - The International Society for Optical Engineering
Analysis and modeling of the positive degradation mechanism observed in 265 nm UV-C LEDs 2025 F. PivaN. RoccatoM. BuffoloS. L. LongatoM. PilatiC. De SantiG. MeneghessoE. ZanoniM. Meneghini + - - Proceedings of the International Conference on Materials and Systems for Sustainability 2025 (ICMaSS)
Analysis of extrinsic failure mechanisms of high-power blue, red, and white LEDs for horticulture and street lighting 2025 Caria, AlessandroFraccaroli, RiccardoDe Santi, CarloBuffolo, MatteoTrivellin, NicolaZanoni, EnricoMeneghesso, GaudenzioMeneghini, Matteo + - PROCEEDINGS OF SPIE Proceedings of SPIE - The International Society for Optical Engineering
Analysis of OFF-state Threshold Voltage Instability on Vertical GaN-on-Si Trench MOSFETs 2025 M. FregolentC. De SantiAndrea CesterG. MeneghessoE. ZanoniM. Meneghini + - - Proceedings of the International Conference on Materials and Systems for Sustainability 2025 (ICMaSS)
Changes in the extraction and collection efficiency of GaN-based MQW solar cells under optical step-stress 2025 Nicoletto M.Caria A.Roccato N.De Santi C.Buffolo M.Meneghesso G.Zanoni E.Meneghini M. + MICROELECTRONICS RELIABILITY - -
Comprehensive Analysis of Deep level Effects and in-situ Photoionization in 0.15 $\mu \mathrm{m}$ buffer-free AIGaN/GaN HEMTs for RF applications 2025 Pieri, Francesco DeFregolent, ManuelSaro, MarcoCarlotto, AndreaBoito, MircoSanti, Carlo DeRampazzo, FabianaMeneghesso, GaudenzioMeneghini, MatteoZanoni, Enrico - IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS IEEE International Reliability Physics Symposium Proceedings
Current Collapse in Buffer-Free GaN-on-SiC Power Transistors: Maxwell-Wagner Effect and Related Model 2025 Cavaliere, AlbertoModolo, NicolaSanti, Carlo DeMeneghesso, GaudenzioZanoni, EnricoMeneghini, Matteo + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Deep Level Effects and Hot-Electron Reliability in Scaled GaN HEMTs 2025 Zanoni, EnricoCarlotto, AndreaDe Pieri, FrancescoFregolent, ManuelSaro, MarcoRampazzo, FabianaDe Santi, CarloMeneghesso, GaudenzioMeneghini, Matteo - IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST IEEE MTT-S International Microwave Symposium Digest
Defects and reliability of UVC-LEDs 2025 Buffolo, MatteoPiva, FrancescoRoccato, NicolaDe Santi, CarloTrivellin, NicolaMeneghesso, GaudenzioZanoni, EnricoMeneghini, Matteo + - PROCEEDINGS OF SPIE Proceedings of SPIE - The International Society for Optical Engineering
Defects in InGaN QW structures: microscopic properties and modeling 2025 Meneghini, MatteoPiva, FrancescoRoccato, NicolaCaria, AlessandroRampazzo, FabianaDe Santi, CarloBuffolo, MatteoGasparotto, AndreaTrivellin, NicolaMeneghesso, GaudenzioZanoni, Enrico + - PROCEEDINGS OF SPIE Proceedings of SPIE - The International Society for Optical Engineering
Development of p-channel GaN FETs on extremely-low doped p-GaN with Mg-diffused Ohmic contacts 2025 Manuel FregolentCarlo De SantiGaudenzio MeneghessoEnrico ZanoniMatteo Meneghini + - - Proceedings of the 15th International Conference on Nitride Semiconductors
Diffusion mechanism as cause of optical degradation in AlGaN-based UV-C leds investigated by TCAD simulations 2025 Roccato N.Piva F.Buffolo M.De Santi C.Trivellin N.Meneghesso G.Zanoni E.Meneghini M. + SCIENTIFIC REPORTS - -
Enhanced Gate Reliability of p-GaN/AlGaN/GaN HEMTs Due to Gate Hole Injection and Recombination 2025 Fregolent, ManuelDe Santi, CarloBoito, MircoRossetto, IsabellaMeneghesso, GaudenzioZanoni, EnricoMeneghini, Matteo + IEEE ELECTRON DEVICE LETTERS - -
Evidence for Avalanche and its Role in Lateral and Vertical Gallium Nitride Devices 2025 C. De SantiR. FraccaroliM. FregolentI. RossettoM. BoitoE. CanatoM. BuffoloG. MeneghessoE. ZanoniM. Meneghini + - - Proceedings of the International Conference on Materials and Systems for Sustainability 2025 (ICMaSS)
Evidence for Avalanche Operation in Sub-Micrometer Power GaN HEMTs with p-GaN Gate 2025 Fraccaroli, RiccardoDell'Andrea, MatteoFregolent, ManuelBoito, MircoDe Santi, CarloMeneghesso, GaudenzioEleonora CanatoEnrico ZanoniRossetto, IsabellaMeneghini, Matteo + - IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS IEEE International Reliability Physics Symposium Proceedings
Evidence for double degradation regime in off-state stressed 100 V GaN transistors: From dielectric failure to subthreshold current increase 2025 Fraccaroli R.Fregolent M.Boito M.De Santi C.Canato E.Rossetto I.Meneghesso G.Zanoni E.Meneghini M. + MICROELECTRONICS RELIABILITY - -