The study describes the consequences of interdiffusione effects, compound formation and Schottky barrier height changes in the multilayer metallization used for Schottky contacts on Si. Moreover, it correlates these failure mechanisms with degradation of performances of Transistor Transistor Logic (TTL) integrated circuits
Failures in Schottky logics induced by intermetallic compound formation in PtSi-Ti/W-Al metal system
ZANONI, ENRICO
1981
Abstract
The study describes the consequences of interdiffusione effects, compound formation and Schottky barrier height changes in the multilayer metallization used for Schottky contacts on Si. Moreover, it correlates these failure mechanisms with degradation of performances of Transistor Transistor Logic (TTL) integrated circuitsFile in questo prodotto:
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