Emitter Coupled Logic circuits, based on bipolar transistors are extremely fast but involve very high current densities and operating junction temperatures which may lead to circuit failure due to electromigration and interdiffusion effects. Electromigration leads both to the formation of open circuits in the Al-Cu metallizations, and to degradation of ohmic contacts due to accumulation of transported metal material.

Failure mechanisms induced by electromigration in advanced ECL ICs

ZANONI, ENRICO
1983

Abstract

Emitter Coupled Logic circuits, based on bipolar transistors are extremely fast but involve very high current densities and operating junction temperatures which may lead to circuit failure due to electromigration and interdiffusion effects. Electromigration leads both to the formation of open circuits in the Al-Cu metallizations, and to degradation of ohmic contacts due to accumulation of transported metal material.
Proceedings of the European Solid State Device Research Conference
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11577/2514360
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