An electron beam testing system has been developed for complete and detailed analysis of latchup in CMOS integrated circuits. The technique allows identification of latchup current paths in steady-state condition, the observation of the time evolution of latchup from the firing event to the final condition and the measurement of the local latchup sensitivity of the various parts of the circuit to an external current source.
SEM Studies of Time Evolution and Sensitivity of Latch-up in CMOS ICs
ZANONI, ENRICO
1986
Abstract
An electron beam testing system has been developed for complete and detailed analysis of latchup in CMOS integrated circuits. The technique allows identification of latchup current paths in steady-state condition, the observation of the time evolution of latchup from the firing event to the final condition and the measurement of the local latchup sensitivity of the various parts of the circuit to an external current source.File in questo prodotto:
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