Effects of high current density and temperature closely combine to degrade power MESFETs during their operating life in radio-link systems. To understand failure mechanisms and distinguish between those accelerated by high current and/or by temperature, we have performed various dc tests and measured thermal resistance and thermal maps of tested devices.

Effects of high current and temperature in power MESFET metallization

ZANONI, ENRICO
1987

Abstract

Effects of high current density and temperature closely combine to degrade power MESFETs during their operating life in radio-link systems. To understand failure mechanisms and distinguish between those accelerated by high current and/or by temperature, we have performed various dc tests and measured thermal resistance and thermal maps of tested devices.
1987
ESSDERC 87
0444704779
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2514456
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